Stripping liquid for removing residual photoresist in semiconductor technology

Abstract

The invention provides a stripping liquid for removing residual photoresist in the semiconductor technology. The stripping liquid comprises the following components in percentage by weight: 20-70% of multimethyl phosphamide, 5-30% of alkanol amine, 0.01-10% of organosilicon polyether type compounds, 0.01-10% of alkynol, 1-30% (including mass) of hydroxylamine and 5-50% of deinoized water. With the stripping liquid, residual cured photoresist layer in the dry etching technology can be easily and quickly removed. The stripping liquid has good protection action on metallic membrane materials, especially aluminum and aluminiferous wiring materials, so the application prospect is good.

Description

technical field [0001] The invention relates to a cleaning agent, in particular to a stripping solution for removing residual photoresist in semiconductor technology. Background technique [0002] Dry etching is the most important technique for patterning interlayer insulating film materials, wiring materials, etc. in the manufacturing process of semiconductor circuit elements. Dry etching On the substrate of interlayer insulating film material and wiring material, the pattern is obtained by sputtering, CVD, electroplating, spin photoresist, and dry gas etching. On the substrate after dry etching, the photoresist used as a mask and the photoresist degenerated layer formed by the reaction of the photoresist and the etching gas remain, and the exposed areas are exposed due to etching. On the sidewall of the etched material, a sidewall protective deposition film remains. These photoresists, altered layers, and sidewall protection deposition films must be removed from the subs...

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