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MEMS kinetic energy conversion

A mobile structure, micro-electromechanical technology, applied in the direction of gaseous chemical plating, generator/motor, piezoelectric effect/electrostrictive or magnetostrictive motor, etc., can solve the problem of energy AlN low-voltage electric coefficient, environmental processing tools pollution and other issues

Active Publication Date: 2015-07-08
TAIWAN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, existing MEMS energy harvesters have many limitations
Traditional MEMS piezoelectric devices that use lead-zirconium-titanium (PZT) thin film materials to convert energy have environmental and processing tool pollution problems
Compared with PZT, traditional MEMS piezoelectric devices using aluminum nitride (AlN) thin-film materials cannot generate more energy because AlN has a lower piezoelectric coefficient
In addition, traditional MEMS piezoelectric devices are limited to converting from mechanical deformation to kinetic energy, and cannot be based on structural displacement, velocity, and acceleration (especially when the latter three motions are zero deformation, that is, there is no deformation)

Method used

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  • MEMS kinetic energy conversion
  • MEMS kinetic energy conversion
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Embodiment Construction

[0031] It is understood that the following disclosure provides many different embodiments, or examples, for implementing different elements of the invention. Specific examples of components and arrangements are described below to simplify the present disclosure. Of course these are merely examples and are not intended to be limiting. Furthermore, the present invention may repeatedly refer to numerals and / or letters in various examples. This repetition is for brevity and clarity and does not in itself dictate a relationship between the various embodiments and / or structures described.

[0032] It is understood that the various processing steps and / or components of the device may only be briefly described, since those steps and / or components are familiar to those of ordinary skill in the art. At the same time, additional processing steps or components may be added, and certain following processing steps or components may be removed and / or changed while still enforcing the prese...

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Abstract

The present disclosure provides a micro device. The device has a micro-electro-mechanical systems (MEMS) movable structure, a plurality of metal loops over the MEMS movable structure, and a piezoelectric element over the MEMS movable structure. Frontside and backside capping wafers are bonded to the MEMS structure, with the frontside and backside capping wafers encapsulating the MEMS movable structure, the plurality of metal loops, and the piezoelectric element. The device further includes a magnet disposed on the frontside capping wafer over the plurality of metal loops.

Description

technical field [0001] The present invention relates to a microdevice and a method of manufacturing the microdevice. Background technique [0002] Microelectromechanical systems (MEMS) devices can harvest energy for a variety of uses, such as self-powered or battery charging devices or systems. Such MEMS devices can harvest energy, for example, by converting mechanical kinetic energy (eg, environmental vibrations) into electrical energy (eg, electric charge) and subsequently powering the device or charging a battery. [0003] However, existing MEMS energy harvesters have many limitations. Traditional MEMS piezoelectric devices that use lead-zirconium-titanium (PZT) thin film materials to convert energy have environmental and processing tool pollution problems. Compared with PZT, conventional MEMS piezoelectric devices using aluminum nitride (AlN) thin film materials cannot generate more energy because AlN has a lower piezoelectric coefficient. In addition, traditional MEM...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B81B3/00B81C1/00H10N30/00H10N30/30H10N30/01H10N30/071H10N30/072
CPCB81C1/00H01L41/1136H01L41/311H01L41/113Y10T29/49146Y10T29/49075H01L41/1138Y10T29/49005H01L41/22H02K35/04B81B3/0021Y10T29/42Y10T29/49073H01L41/312H02N2/186H10N30/308H10N30/306H10N30/01H10N30/071H10N30/30H10N30/072
Inventor 钟添淦林宗贤黄耀德朱家骅洪嘉明戴文川杨长沂
Owner TAIWAN SEMICON MFG CO LTD