Compound semiconductor device and method of producing semiconductor device
A semiconductor and compound technology, applied in the field of compound semiconductor devices and their manufacturing, can solve problems such as the inability to improve voltage tolerance
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no. 1 approach
[0036] The present embodiment discloses an AlGaN / GaN HEMT as a compound semiconductor device.
[0037] Figures 1A to 4B is a schematic cross-sectional view showing the AlGaN / GaN HEMT manufacturing method according to the first embodiment in order of steps.
[0038] First, if Figure 1A As shown, a stacked compound semiconductor structure 2 is formed on, for example, a Si substrate 1 as a growth substrate. As the growth substrate, instead of the Si substrate, a sapphire substrate, a GaAs substrate, a SiC substrate, a GaN substrate, or the like can be used. Furthermore, the conductive nature of the substrate can be of any type, semi-insulating or conductive.
[0039] The stacked compound semiconductor structure 2 includes a buffer layer 2a, an electron transport layer 2b, an intermediate layer 2c, an electron supply layer 2d, and a capping layer 2e.
[0040] In the complete AlGaN / GaN HEMT, a two-dimensional electron gas (2DEG) is generated near the interface of the electron...
Embodiment 1
[0098] This example discloses the same AlGaN / GaN HEMT as in the case of the first embodiment. However, the modified example differs from the first embodiment in that the capping layer of the compound semiconductor structure is stacked. Note that the same components and the like as those of the first embodiment are denoted by the same reference numerals and letters, and will not be described in further detail here.
[0099] 9 is a schematic cross-sectional view showing main steps of an AlGaN / GaN HEMT manufacturing method according to Modification Example 1 of the first embodiment.
[0100] First, if Figure 9A As shown, a stacked compound semiconductor structure 21 is formed on, for example, a Si substrate 1 as a growth substrate.
[0101] The stacked compound semiconductor structure 21 includes a buffer layer 2a, an electron transport layer 2b, an intermediate layer 2c, an electron supply layer 2d, and a capping layer 2e.
[0102] The capping layer 22 is made to have a stac...
Embodiment 2
[0120] This example discloses the same AlGaN / GaN HEMT as in the case of the first embodiment. However, the modified example differs from the first embodiment in the p-type semiconductor layer of the field plate. Note that the same components and the like as those of the first embodiment are denoted by the same reference numerals and letters, and will not be described in further detail here.
[0121] 11 and 12 are schematic cross-sectional views showing main steps of an AlGaN / GaN HEMT manufacturing method according to Variation Example 2 of the first embodiment.
[0122] First, if Figure 11A As shown, a stacked compound semiconductor structure 2 and a p-type semiconductor film 23 which is a semiconductor whose conductivity type is opposite to that of the stacked compound semiconductor structure 2 are formed on, for example, a Si substrate 1 .
[0123] The stacked compound semiconductor structure 2 includes a buffer layer 2a, an electron transport layer 2b, an intermediate la...
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