A kind of mixed crystal plane double polycrystalline Bicmos integrated device and its preparation method

A technology of mixed crystal planes and integrated devices, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., and can solve problems such as improving the performance of devices and integrated circuits

Inactive Publication Date: 2015-08-12
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It aims to solve the problem that Si bipolar transistors can no longer improve the performance of devices and integrated circuits by the method of proportional reduction commonly used in the industry due to the limitations of voltage, base width, power density and other reasons.

Method used

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  • A kind of mixed crystal plane double polycrystalline Bicmos integrated device and its preparation method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0117] Embodiment 1: Prepare conductive channel 22nm mixed crystal plane, double polycrystalline BiCMOS integrated device and circuit by self-alignment process, the specific steps are as follows:

[0118] Step 1, SOI substrate material preparation.

[0119] (1a) Select the N-type doping concentration as 1×10 15 cm -3 The Si wafer with a crystal plane of (110) is oxidized on the surface, and the thickness of the oxide layer is 0.5 μm, which is used as the base material of the upper layer, and hydrogen is injected into the base material;

[0120] (1b) Select the P-type doping concentration as 1×10 15 cm -3 The Si sheet with a crystal plane of (100) is oxidized on the surface, and the thickness of the oxide layer is 0.5 μm, which is used as the base material of the lower layer;

[0121] (1c) Using a chemical mechanical polishing (CMP) process to polish the surface of the lower layer and the upper layer of substrate material after hydrogen injection;

[0122](1d) SiO on the s...

Embodiment 2

[0182] Embodiment 2: Using the self-alignment process to prepare conductive channel 30nm mixed crystal plane, double polycrystalline BiCMOS integrated device and circuit, the specific steps are as follows:

[0183] Step 1, SOI substrate material preparation.

[0184] (1a) Select the N-type doping concentration as 3×10 15 cm -3 The Si wafer with a crystal plane of (110) is oxidized on the surface, and the thickness of the oxide layer is 0.75 μm, which is used as the base material of the upper layer, and hydrogen is injected into the base material;

[0185] (1b) Select the P-type doping concentration as 3×10 15 cm -3 The Si sheet with a crystal plane of (100) is oxidized on the surface, and the thickness of the oxide layer is 0.75 μm, which is used as the base material of the lower layer;

[0186] (1c) Using a chemical mechanical polishing (CMP) process to polish the surface of the substrate material of the lower layer and the upper layer of the active layer after injecting ...

Embodiment 3

[0247] Embodiment 3: A self-alignment process is used to prepare a mixed crystal plane with a conductive channel of 45nm, a double-polycrystalline BiCMOS integrated device and a circuit, and the specific steps are as follows:

[0248] Step 1, SOI substrate material preparation.

[0249] (1a) Select the N-type doping concentration as 5×10 15 cm -3 The Si sheet with a crystal plane of (110) is oxidized on the surface, and the thickness of the oxide layer is 1 μm, which is used as the base material of the upper layer, and hydrogen is injected into the base material;

[0250] (1b) Select the P-type doping concentration as 5×10 15 cm -3 The Si wafer with a crystal plane of (100) is oxidized on the surface, and the thickness of the oxide layer is 1 μm, which is used as the base material of the lower layer;

[0251] (1c) Using a chemical mechanical polishing (CMP) process to polish the lower layer and the surface of the upper substrate material after hydrogen injection;

[0252]...

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Abstract

The invention discloses a mixed crystal face double polycrystal BiCMOS (Bipolar Complementary Metal Oxide Semiconductor) integrated device and a manufacturing method thereof. The method comprises the following steps: after isolating an double-crystal-plane SOI (Silicon on Insulator) substrate and a deep trench, etching the deep trench at the area of a bipolar device; continuously growing a collector region, a base region, an emitter region, a polycrystal silicon base and an emitter of the device in the trench so as to form a SiGe HBT (Heterojunction Bipolar Transistor); etching the deep trench at the area of an NMOS (N-Channel Metal Oxide Semiconductor) device; selectively growing a stain SiGe extensional layer of which the crystal face is (110) at an active area of a PMOS (P-Channel Metal Oxide Semiconductor) device; manufacturing the PMOS device at the area. During the manufacturing process of the SiGe HBT device, a self-aligning process is adopted; the BiCMOS device has a full face structure, and the characteristics that the electronic mobility of a tensile strain Si material is higher than that of a body Si material and the hole mobility of the compressive strain SiGe material is higher than that of the body Si material and the influence of the crystal face on the mobility are fully utilized; and moreover, the performance-enhanced mixed crystal face double polycrystal BiCMOS integrated device and a circuit of the mixed crystal face double polycrystal BiCMOS integrated device are manufactured.

Description

technical field [0001] The invention belongs to the technical field of semiconductor integrated circuits, and in particular relates to a mixed crystal plane double-polycrystalline BiCMOS integrated device prepared by adopting a self-alignment process and a preparation method. Background technique [0002] Integrated circuits are the cornerstone and core of the economic development of an information society. Just as the American engineering and technology circle recently named the fifth electronic technology among the 20 greatest engineering and technological achievements in the world in the 20th century, "from vacuum tubes to semiconductors and integrated circuits, they have become the cornerstone of intelligent work in various industries today." Integrated circuits. It is one of the typical products that can best reflect the characteristics of knowledge economy. At present, the electronic information industry based on integrated circuits has become the world's largest indu...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): H01L27/06H01L21/8249
Inventor张鹤鸣吕懿周春宇宣荣喜胡辉勇舒斌宋建军郝跃
OwnerXIDIAN UNIV