Super-high density power trench MOSFET

An oxide semiconductor and field effect transistor technology, applied in the field of ultra-high density power trench metal oxide semiconductor field effect transistors, can solve problems such as difficulty in material insertion, difficulty in manufacturing, etc.
CN102770947BActive Publication Date: 2015-07-01VISHAY SILICONIX LLC
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Patent Information

Authority / Receiving Office
CN ยท China
Patent Type
Patents(China)
Current Assignee / Owner
VISHAY SILICONIX LLC
Publication Date
2015-07-01

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Abstract

A method, in one embodiment, can include forming a plurality of trenches in a body region for a vertical metal-oxide semiconductor field-effect transistor (MOSFET). In addition, the method can include angle implanting source regions into the body region. Furthermore, dielectric material can be grown within the plurality of trenches. Gate polysilicon can be deposited within the plurality of trenches. Moreover, the method can include chemical mechanical polishing the gate polysilicon. The method can also include etching back the gate polysilicon within the plurality of trenches.
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Description

[0001] Cross References to Related Applications

[0002] This application claims priority to U.S. Provisional Application Serial No. 61 / 253,464, filed October 20, 2009, by Robert Q. Xu et al., entitled "Super-High Density Power Trench MOSFET with Recessed Gated and Trench Edge Termination" , the contents of which are hereby incorporated by reference. Background technique

[0003] For conventional trench metal-oxide-semiconductor field-effect transistors (MOSFETs), it is desirable to increase their trench packing density. However, as the trench fill density of conventional trench MOSFETs continues to increase, manufacturing such conventional trench MOSFETs becomes more difficult. For example, it becomes more challenging to print very narrow trenches using photolithography. Also, inserting material into the very narrow trenches becomes more difficult when assembling this type of conventional trench MOSFET. Furthermore, the proper arrangement of specific electrical contacts be...

Claims

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