Unlock instant, AI-driven research and patent intelligence for your innovation.

Film-forming method and film-forming apparatus

A film-forming method and film-forming device technology, applied in gaseous chemical plating, coating, electrical components, etc.

Active Publication Date: 2015-07-29
TOKYO ELECTRON LTD
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] However, in the prior art, it is difficult to deposit a thin film with excellent film thickness distribution and excellent film quality while maintaining the film forming rate.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Film-forming method and film-forming apparatus
  • Film-forming method and film-forming apparatus
  • Film-forming method and film-forming apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0027] As a result of research to further improve the productivity of the rotary table-type film-forming apparatus described as the related art, the following findings were obtained. When the rotation speed of the turntable is further increased, the first reactant gas may be adsorbed on the surface of the substrate and remain on the surface where the reaction by-products are formed before the second reactant gas and the first reactant gas adsorbed on the surface of the substrate react sufficiently. In the reaction product, or by reducing the density of the reaction product, it may be difficult to increase productivity while obtaining a high-quality thin film.

[0028] Therefore, a method of modifying the thin film by installing a plasma generation source facing the rotary table and exposing the thin film formed on the surface of the substrate to a gas activated by the plasma generation source has been attempted. As a result, although it was found that the film quality could be...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention provides a film-forming method and a film-forming device. The film-forming method comprises the following steps of inputting a substrate into a vacuum container; placing the substrate on a rotating bench which is rotatably disposed in the vacuum container; rotating the rotating bench; supplying first reaction gas to the substrate from a first reaction gas supply part, enabling the first reaction gas to be adhered to the substrate; supplying second reaction gas having reaction with the first reaction gas to the substrate from a second reaction gas supply part, enabling the second reaction gas to have reaction with the first reaction gas adhered to the substrate, and forming reaction products on the substrate; supplying hydrogen gas to a plasma generating part and forming plasma at the upper part of the rotating bench. The plasma generating part is disposed at the circumference of the rotating bench, isolating from the first reaction gas supply part and the second reaction gas supply part.

Description

technical field [0001] The present invention relates to a film forming method and a film forming apparatus for forming a film on a substrate surface by alternately supplying at least two reactive gases that react with each other to the substrate. Background technique [0002] With further miniaturization of circuit patterns of semiconductor devices, further thinning and uniformization of various films constituting semiconductor devices are required. As a film-forming method that meets such demands, a so-called molecular layer film-forming (MLD) method (also called an atomic layer film-forming (ALD) method) is known (for example, Patent Document 1). 1 reactant gas is supplied onto the substrate so that the first reactant gas is adsorbed on the surface of the substrate, and then a second reactant gas is supplied onto the substrate to react the second reactant gas with the first reactant gas adsorbed on the surface of the substrate. A film composed of the reaction product of t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/50C23C16/455H01L21/31
CPCC23C16/401C23C16/45536C23C16/505H01L21/02164H01L21/0228
Inventor 加藤寿牛窪繁博田村辰也尾崎成则熊谷武司菊地宏之
Owner TOKYO ELECTRON LTD