Forming method of embedded area and forming method of embedded source and drain

Abstract

The embodiment of the invention discloses a forming method of an embedded area. The method comprises the steps of: providing a substrate and a first structure on the substrate; forming a groove on the substrate on at least one side of the first structure; depositing, and forming at least one filling layer on the groove, the substrate, the first substrate and the lateral wall of the first structure; forming a protection layer on the filling layer on the groove; removing the filling layer on the surface of the substrate to preserve the filling layer in the groove, and removing the protection layer. Due to a deposition method, the materials of the substrate and the filling layer are not limited, can be freely configured according to performance requirements of the apparatus, and have generality. In addition, the filling layer inside the groove is not damaged by a middle etching process under covering of the protection layer, and the quality of the filling layer is ensured.

Description

technical field [0001] The present invention relates to semiconductor manufacturing technology, more specifically, to a method for forming an embedded region and a method for forming an embedded source and drain. Background technique [0002] With the rapid development of integrated circuit technology, the industry has put forward higher requirements for the performance of integrated circuit devices. In the manufacturing process of integrated circuit devices, it is necessary to form embedded regions in the substrate, especially embedded source and drain, to meet device performance requirements. [0003] After entering the 90nm process era, one approach is to form embedded sources and drains through epitaxial technology, such as e-SiGe and e-SiC, and introduce stress on the channel through the embedded sources and drains to improve carrier mobility. , thereby increasing the speed of the device. Usually, the steps of forming the embedded source and drain include: figure 1 A...

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Problems solved by technology

[0005] Due to the limitations of epitaxial technology, the above-mentioned problem of using epitaxial technology to form embedded source and drain is that it can only be the same as the material or has the material composition of the material, and cannot be filled with other materials arbitrarily.

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