CVD (Chemical Vapor Deposition) equipment and control method thereof

Abstract

The invention provides CVD (Chemical Vapor Deposition) equipment comprising a cavity, an electrode plate, a plurality of horizontally arranged driving wheels, a carrier plate, first lifting mechanisms and a controller, wherein the cavity is used for forming a chamber; the electrode plate is arranged on the top of the chamber; the driving wheels are arranged in the chamber; the carrier plate is arranged on the driving wheels; the first lifting mechanisms are respectively located at two ends of the electrode plate and used for supporting the electrode plate and controlling the electrode plate to vertically move; and the controller is connected with the driving wheels and the first lifting mechanisms and used for controlling the rotation of the driving wheels and the lifting of the first lifting mechanism so as to move the electrode plate and the carrier plate in or out of the chamber. The invention also provides a control method. The CVD equipment provided by the embodiment of the invention has the advantages of high electrode plate replacement speed and low energy consumption. The control method of the CVD equipment has the advantages of simplicity in control and high control precision.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a CVD device and a control method for the CVD device. Background technique [0002] Plasma Enhanced Chemical Vapor Deposition (PECVD) equipment is mainly divided into direct method and indirect method according to different film forming methods, both of which use a carrier plate to hold wafers. In the direct method, the carrier is grounded, the upper electrode is connected to intermediate frequency or radio frequency, and plasma is formed between the upper electrode and the carrier. In the indirect method, the carrier plate is not grounded, and only plays a role of transmission. The electrode plate is connected to high frequency or microwave, and the ions are combined into an anti-reflection film in the discharge space and deposited on the surface of the wafer by diffusion. [0003] The indirect method is mostly the bottom coating method. During the coating, the wafer i...

AI Technical Summary

Problems solved by technology

However, since the electrode plate 130 of the traditional plate-type direct method coating PECVD device 100 is fixed on the upper surface of the chamber 111, replacement is cumbersome and time-consuming

And during the replacement process, the heater 160 needs to stop heating and cooling, and after the electrode plate 130 is replaced, the heater 160 needs to reheat the carrier plate 140 to the temperature of the coating film required by the wafer, resulting in increased energy consumption, and the electrode plate 130 long maintenance time

Images