Calibration of write timing in memory devices

Abstract

A method and system for calibrating write timing in a memory device. For example, the method can include receiving a data signal, writing a clock signal and a reference signal. The method can also include detecting a phase shift of the reference signal over time. The phase shift of the reference signal can be used to calibrate the phase difference between the data signal and the write clock signal, wherein the memory device recovers the signal from the data signal based on the calibrated write timing of the data signal and the write clock signal.

Description

technical field [0001] Embodiments of the present invention generally relate to calibration of write timing in memory devices, and more particularly to calibrating write timing of memory devices based on reference signals. Background technique [0002] For example, data communication between a processing unit and a memory device typically involves sending data along signal paths such as wires and traces. In a memory device with a synchronous interface, the processing unit can transmit clock signals and data signals to the memory device. The clock signal is used to determine when the data signal should be latched by the memory device, thereby synchronizing the memory device with the processing unit. For correct data recovery, the memory device must receive the clock signal within a period of time for the clock signal to sample the data signal (i.e., the clock signal must sample the data signal for a period of time corresponding to the data eye of the data signal ). Otherwi...

AI Technical Summary

Problems solved by technology

[0003] Real-world variables, such as temperature and vibration, can cause attenuation of data signals and clock signals from the processing unit to the memory device, causing loss of data signal integrity

This can result in poor or imprecise data recovery of the memory device

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