Preparation method of self-activation laser crystal phosphoric acid trisneodymium
A technology of trineodymium phosphate and crystal, which is applied in the directions of crystal growth, chemical instruments and methods, and self-melting solvent melt, etc., to achieve the effect of high conversion efficiency and high concentration of activated ions
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Embodiment 1
[0025] figure 1 Provided adopting the method of the present invention to grow Nd 3 PO 7 Schematic diagram of the device structure of the crystal. The device is a vertical resistance wire heating furnace. The seed rod 2 extends into the melt 8 and rotates under the drive of the rotating device 1. The furnace tube 4 is equipped with refractory bricks 3, and the resistance wire 5 is wound on the outer wall of the furnace tube 4. , its outer layer is thermal insulation material 6. The temperature control equipment is FP21 programmable automatic temperature controller, and the temperature control accuracy in the growth temperature area is 0.1%. The crystal incubator 7 is placed in the alumina crucible 9, which is a platinum crucible of 70×90 mm, which can withstand the working temperature below 1774° C., and the melt contained therein is not easy to corrode it. The thermocouple 10 adopts PtRh / Pt, which can effectively control the growth temperature.
Embodiment 2
[0031] Lithium carbonate-tungsten oxide (Li 2 CO 3 -WO 3 ) The molar ratio of 1:1 is used as a flux, and the raw material is 3N Nd 2 o 3 and 3NNH 4 h 2 PO 4 , according to ammonium dihydrogen phosphate: neodymium oxide = 3: 2, mix evenly into a platinum crucible, control the concentration of solute (ammonium dihydrogen phosphate + neodymium oxide) to 25wt%, and raise the temperature to 1000 ° C.
[0032] Raise the temperature to 1030°C, keep the temperature constant for 30 hours, stir after the material is fully melted, so that the melt is fully mixed and even. Use the seed crystal test method to measure the temperature of the solution saturation point, select a better quality seed crystal for growth, and when the temperature is 12°C higher than the solution saturation point, introduce the seed crystal into the growth furnace, place it at an appropriate position above the liquid surface and fully preheat it before lowering it into the Solution, then lower the temperature ...
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