Substrate surface processing system having compact structure and substrate surface treatment method
A substrate surface and processing system technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of reducing the overall length of the substrate surface processing system
Inactive Publication Date: 2013-02-06
MM TECH CO LTD
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Problems solved by technology
However, the disclosed system provides an inline system with a straight path for a single process, so the overall length of the substrate surface processing system is not reduced
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[0139] Hereinafter, the present invention will be described in detail by explaining preferred embodiments of the invention with reference to the accompanying drawings.
[0140] figure 1 is a schematic diagram of a substrate surface processing system 100 according to an embodiment of the present invention.
[0141] Such as figure 1 As shown, the substrate surface processing system 100 includes a first processing chamber 110 , a second processing chamber 120 and a third processing chamber 130 .
[0142] The first processing chamber 110 is attached to an upper portion of the side wall 123 of the second processing chamber 120 and is formed to extend in a direction parallel to the ground. An inlet 111 is formed at a first end of the first processing chamber 110, and the substrate 10 is introduced into the first processing chamber 110 through the inlet 111 by a separate transfer robot (not shown).
[0143] The second processing chamber 120 extends in a direction perpendicular to ...
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The present invention provides a substrate surface treatment system having a compact structure and a substrate surface treatment method. The substrate surface treatment system comprises: a first treatment chamber including an inlet at a first end portion and extending along a direction parallel to the ground; a second treatment chamber extending along a direction perpendicular to the direction of the ground, wherein the second end portion of the first treatment chamber is attached to the upper portion of the second treatment chamber at the position of the first end portion of the second treatment chamber; a third treatment chamber extending along the direction parallel to the ground, and located under the first treatment chamber, and having an outlet at the first end portion, wherein the lower portion, located in the first end portion of the second treatment chamber, of the second treatment chamber is attached to the third treatment chamber at the position of the second end of the third treatment chamber; a first horizontal transfer unit; a second horizontal transfer unit; a vertical transfer unit; a third horizontal transfer unit; and a treatment module installed in at least one of the first treatment chamber to the third treatment chamber and treatment a substrate surface.
Description
technical field [0001] The invention relates to a substrate surface treatment system and a substrate surface treatment method, more specifically, to a substrate surface treatment system with a compact structure and a substrate surface treatment method. Background technique [0002] A driving element including a plurality of thin-film transistors (TFT) is formed on a substrate for forming an organic light emitting display element or a liquid crystal display element. [0003] To form such a driving element, a silicon film such as a polysilicon film is formed on a substrate. The polysilicon film is formed by crystallizing an amorphous silicon film by a crystallization process such as ELA. The polysilicon film is patterned to serve as an active layer of the TFT. [0004] However, a silicon oxide film is naturally formed on the surface of the amorphous silicon film and / or polysilicon film. [0005] The silicon oxide film can adversely affect the crystallization process. In ad...
Claims
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IPC IPC(8): H01L21/67
Inventor 安吉秀张承逸
Owner MM TECH CO LTD