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Ultra-high density vertical and non-memory device and method of manufacturing the same

A device and control gate technology, applied in three-dimensional vertical NAND (NAND) strings and other three-dimensional devices and their manufacturing fields, can solve difficult and time-consuming problems

Active Publication Date: 2015-08-19
SANDISK TECH LLC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this NAND string only provides one bit per cell
Furthermore, the active regions of the NAND strings are formed through a relatively difficult and time-consuming process involving repeated formation of sidewall spacers and etching of a portion of the substrate, which results in a generally conical active region shape

Method used

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  • Ultra-high density vertical and non-memory device and method of manufacturing the same
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  • Ultra-high density vertical and non-memory device and method of manufacturing the same

Examples

Experimental program
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Embodiment I

[0039] In some embodiments, the monolithic three-dimensional NAND string 180 includes a semiconductor channel 1 having at least one end portion extending substantially perpendicular to the major surface 100a of the substrate 100, as shown in FIGS. 1A, 2A and Figures 3 to 4 shown in . For example, the semiconductor channel 1 may have a columnar shape and the entire columnar semiconductor channel extends substantially perpendicular to the main surface of the substrate 100, such as Figure 1A and 2A shown in . In these embodiments, the source / drain electrodes of the device may include a lower electrode 102 provided below the semiconductor channel 1 and an upper electrode 202 formed above the semiconductor channel 1, as shown in FIGS. 1A and 2A. Alternatively, the semiconductor channel 1 may have a U-shaped tube shape, such as image 3 and 4 shown in . The two wing portions 1a and 1b of the U-shaped tube-shaped semiconductor channel may extend substantially perpendicular to ...

Embodiment II

[0079] In the second embodiment, the source / drain electrodes of the NAND strings can both be formed above the semiconductor channel 1 and the channel 1 has a U-shaped tube shape, for example, as image 3 and 4 shown in . In these embodiments, optional body contact electrodes (as will be described below) may be disposed on or in the substrate 100 to provide body contact to the connecting portion of the semiconductor channel 1 from below.

[0080]As used herein, a "U-tube" shape is a side-view cross-sectional shape configured to resemble the English letter "U". This shape has two segments (referred to herein as “wing portions”) that extend substantially parallel to each other and substantially perpendicular to the major surface 100a of the substrate 100 . The two wing portions are connected to each other by a connecting segment or portion extending substantially perpendicular to the first two segments and substantially parallel to the surface 100a. Each of the three segments ...

Embodiment III

[0094] In the third embodiment, except Figures 3 to 4 and Figures 17 to 21 In addition to the U-shaped tube shape shown in , the semiconductor channel 1 can also have a "small" U-shaped side-view profile, such as Figure 22A (perspective view) and 22B (along Figure 22A The cross-sectional view of the line Y-Y' in) is shown in. In the second embodiment, each wing 1 a , 1 b of said U-tube shape is formed in a separate opening 81 , 82 . In this third embodiment, the two wings of said "small" U-shape are formed in the same opening.

[0095] Specifically, as Figure 22A and 22B As shown in , the two wing portions 1w and 1w' of the U-shaped semiconductor channel 1 are formed in the same opening 81. The wing portions extend substantially perpendicular to the main surface 100 a of the substrate 100 and are connected by a connecting portion 1 w ″ at the bottom of the opening 81 . The connecting portion extends substantially parallel to the main surface 100 a of the substrate 1...

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PUM

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Abstract

Monolithic, three dimensional NAND strings include a semiconductor channel, at least one end portion of the semiconductor channel extending substantially perpendicular to a major surface of a substrate, a plurality of control gate electrodes having a strip shape extending substantially parallel to the major surface of the substrate, the blocking dielectric comprising a plurality of blocking dielectric segments, a plurality of discrete charge storage segments, and a tunnel dielectric located between each one of the plurality of the discrete charge storage segments and the semiconductor channel.

Description

technical field [0001] The present invention relates generally to the field of semiconductor devices and, in particular, to three-dimensional vertical NAND (NAND) strings and other three-dimensional devices and methods of fabrication thereof. Background technique [0002] Three-dimensional vertical NAND strings are disclosed in a paper by T. Endoh et al. entitled "Novel Ultra High Density Memory With AStacked-Surrounding Gate Transistor (S-SGT) Structured Cell, IEDM Proc. (2001) 33-36". However, this NAND string only provides one bit per cell. Furthermore, the active regions of the NAND strings are formed through a relatively difficult and time-consuming process involving repeated formation of sidewall spacers and etching a portion of the substrate, which results in a generally conical active region shape. Contents of the invention [0003] According to one embodiment of the present invention, a method of fabricating a monolithic three-dimensional NAND string comprising: ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/336H01L21/8247H01L27/115H01L29/792H01L29/788H10B41/20H10B41/27H10B43/20H10B43/27H10B69/00
CPCH01L27/11556H01L27/11551H01L29/7926H01L29/78642H01L27/11578H01L29/66833H01L29/7889H01L29/66825H10B41/20H10B43/20H10B41/27H10B43/27
Inventor J.奥斯梅尔V.普拉亚斯H.简G.玛塔米斯李耀升J.凯张渊G.撒玛奇萨
Owner SANDISK TECH LLC