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Component with semiconductor body having a region of doped material and method for producing this region

A technology for doping materials and semiconductors, applied in the field of power semiconductor components, can solve the problems of slope change and doping distribution fluctuation in the field cut-off region.

Active Publication Date: 2016-01-20
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantage here, however, is that the resulting doping profile of the field stop region has significant fluctuations
This can lead, for example, to undesired changes in the slope in the current and voltage characteristic curves during a circuit breaker effected by an IGBT, for example
Also, in some cases, the volatility of the doping profile may negatively affect the flexibility of the breaking process

Method used

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  • Component with semiconductor body having a region of doped material and method for producing this region
  • Component with semiconductor body having a region of doped material and method for producing this region
  • Component with semiconductor body having a region of doped material and method for producing this region

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Embodiment Construction

[0036] Embodiments of the present invention will be further described below with reference to the accompanying drawings. Prior to this, it should be noted that the same or similar reference numerals are used to represent the same elements in the drawings, and repeated descriptions of these elements are omitted. In addition, the scale in the figure is not necessarily proportional to the actual size, and the focus is on explaining the basic principles.

[0037] exist figure 1 shows a semiconductor component 10 having a semiconductor body 11 with an upper side 12 and a lower side 13 opposite the upper side 12 . The semiconductor component 10 can be, for example, a diode or an IGBT, wherein possible embodiments of the invention are not restricted to these two semiconductor component types.

[0038] In the exemplary embodiment shown in the figure, the semiconductor body 11 can be formed at least partially from a Czochralski semiconductor material or a magnetic Czochralski semicond...

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Abstract

The component (10) has a dopant region (14) i.e. field stop zone, is formed in a semiconductor body (11). The dopant region is formed with an oxygen or vacancy complex for distance (L) of about 10 microns along a direction from an upper side (12) of the semiconductor body to a lower side (13) of the semiconductor body. The dopant region comprises oxygen concentration within a range of 1*1017 cm -> 3>to 5*1017 cm -> 3>, preferably 3*1017 cm -> 3>to 5*1017 cm -> 3>. The semiconductor body is partially formed of a Czochralski semiconductor material or magnetic Czochralski semiconductor material. An independent claim is also included for a method for manufacturing a dopant region in a semiconductor body.

Description

technical field [0001] Embodiments of the invention relate to a semiconductor component having an extended dopant region in a semiconductor body with a small variation in the dopant concentration. Embodiments relate in particular to power semiconductor components having such doped material regions. In addition, embodiments of the invention also relate to a method for producing such regions of doped material in a semiconductor. Background technique [0002] A region of doped material within the semiconductor body is required in all semiconductor components. For some applications, a region of doped material that extends itself deep within the semiconductor body or is itself deep within the semiconductor body is required. For example, field stop regions of IGBTs or diodes. The generation of such field stop regions, ie regions of increased doping deep within the semiconductor body, is described, for example, in DE 10 2004 047 749 A1. [0003] Especially when the diameter of ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/36H01L21/223
Inventor 托马斯·奈德哈特弗朗茨·约瑟夫·尼德尔诺什特海德汉斯-约阿希姆·舒尔茨维尔纳·舒斯特尔德亚历山大·苏斯蒂
Owner INFINEON TECH AG