Charge pump capable of eliminating threshold voltage influence

A technology of threshold voltage and charge pump, applied in the field of charge pump, can solve the problems of threshold voltage and body effect, and achieve the effect of eliminating the threshold voltage and body effect, and improving the conversion efficiency

Inactive Publication Date: 2013-03-27
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0019] In view of the problems encountered in the above-mentioned CTS2 charge pump structure, the main purpose of the present invention is to provide a charge pump that eliminates the influence of threshold voltage, so as to solve the problems of threshold voltage and body effect caused by the last stage transmission tube

Method used

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  • Charge pump capable of eliminating threshold voltage influence
  • Charge pump capable of eliminating threshold voltage influence
  • Charge pump capable of eliminating threshold voltage influence

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Embodiment Construction

[0032] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.

[0033] figure 1 is the circuit diagram of the basic Dickson charge pump structure. All MOS tubes in the figure (MD 1 ~MD n+1 ) are NMOS tubes, and are connected together in the form of diodes. Among them, MD 1 The gate and source terminals are connected to the power supply voltage VDD, and the drain terminal is connected to MD 2 source and gate terminals; MD 2 The drain terminal is then connected to MD 3 Gate and source terminals, and so on, MD n The gate and source terminals of the MD n-1 The drain terminal, MD n The drain is terminated to the MD n+1 source and gate terminals, MD n+1 The drain is terminated with a load resistor R L and load capacitance Cout, MD 1 and MD 2 The connection between is node 1, M...

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Abstract

The invention discloses a charge pump capable of eliminating threshold voltage influence. The charge pump is obtained by improving a CTS2 charge pump structure, an NMOS (n-channel metal oxide semiconductor) tube serving as a transmission tube at the last level of the CTS2 charge pump is replaced by a PMOS (p-channel metal oxide semiconductor) tube, and PMOS tube control voltage is switched between zero and output voltage via high-low change of a clock. The charge pump is simple in structure, output voltage and efficiency are improved, and promotion and application are benefited.

Description

technical field [0001] The invention relates to the technical field of charge pumps, in particular to a charge pump for eliminating the influence of threshold voltage, which can be applied to memory, power supply and other modules. Background technique [0002] The charge pump circuit is used to provide a high voltage or negative voltage higher than the external power supply voltage. For many non-volatile memories, the read and write operations require high voltage (may also be negative high voltage), so the charge pump is widely used in the memory. At the same time, as the complexity of circuit design increases, various hybrid circuits emerge as the times require. Simply relying on the voltage provided by an external power supply is far from meeting the requirements. The characteristics of the charge pump determine that it can solve this problem, especially as the power supply voltage drops. , charge pumps are more and more widely used. [0003] The most classic Dickson (d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M3/07
Inventor 刘明刘阿鑫谢常青霍宗亮张满红张君宇陈映平潘立阳
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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