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Power-fail protective circuit and power-fail protective sequential circuit for flash memory

A technology for power-down protection and sequential circuits, applied in the field of power-down protection sequential circuits, which can solve problems such as data erroneous erasure

Active Publication Date: 2014-01-22
SHENZHEN GONGJIN ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Based on this, it is necessary to provide a power-down protection circuit for flash memory in view of the problem that traditional flash memory is easily erased by mistake during power-off

Method used

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  • Power-fail protective circuit and power-fail protective sequential circuit for flash memory
  • Power-fail protective circuit and power-fail protective sequential circuit for flash memory
  • Power-fail protective circuit and power-fail protective sequential circuit for flash memory

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Embodiment Construction

[0025] In order to make the objectives, features, and advantages of the present invention more obvious and understandable, the specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings.

[0026] figure 1 It is a schematic circuit diagram of a power-down protection circuit for flash memory in an embodiment. The power-down protection circuit 100 includes a power monitoring module 110 and an electronic switch unit 120. The power monitoring module 110 is connected to the electronic switch unit 120, and the electronic switch unit 120 is used to connect to a write protection pin of a flash memory (Flash). The power monitoring module 100 is used to obtain an external power supply (VDD), and control the electronic switch unit 120 to output a low level when the voltage of the external power supply is less than the power-down threshold (at this time the voltage of the central processing unit is still within the rated range) ...

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Abstract

The invention relates to a power-fail protective sequential circuit for a flash memory. The power-fail protective sequential circuit comprises an independent power supply converting module, a power supply monitoring module, a write-protection module and a reset module, wherein the independent power supply converting module is used for converting an exterior power supply into an internal power supply which is output through the output end of the independent power supply converting module, and thus the internal power supply power-fail at last is realized during the process of the exterior power supply power-fail; the power supply monitoring module is used for obtaining the exterior power supply, and outputting an alarm signal when the voltage of the exterior power supply is less than a power-fail threshold. The invention further relates to a power-fail protective circuit for the flash memory. The power-fail protective circuit is used for pulling the write-protection pin of the flash memory to a low level when the voltage of the exterior power supply decreases to be less than the power-fail threshold, the flash memory is put at a write-protection state until power-fail is finished. So that, during the power-fail process, data stored in the flash memory can not be erased, the safety of the stored data is improved.

Description

Technical field [0001] The invention relates to an emergency protection circuit device, in particular to a power failure protection circuit for flash memory, and also to a power failure protection sequential circuit for flash memory. Background technique [0002] The English name of flash memory is "Flash Memory", generally referred to as "Flash" for short. Flash memory is a non-volatile (Non-Volatile) memory that can retain data for a long time without current supply. Its storage characteristics are equivalent to hard disks. This feature is what makes flash memory a variety of portable digital devices. The basis of the storage medium. Flash memory is mainly divided into two categories: NOR type and NAND type. [0003] The storage unit of NAND flash memory adopts a serial structure, and the reading and writing of the storage unit is performed in units of pages and blocks (a page contains several bytes, and several pages form storage blocks. The size of NAND storage blocks is 8 to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11C16/06
Inventor 薛孙曦王金桂
Owner SHENZHEN GONGJIN ELECTRONICS CO LTD
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