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Power-down protection circuit and power-down protection sequence circuit for flash memory

A technology of power-down protection and sequential circuits, which is applied in the field of power-down protection sequential circuits, and can solve problems such as data erasure by mistake

Active Publication Date: 2018-05-22
SHENZHEN GONGJIN ELECTRONICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Based on this, it is necessary to provide a power-down protection circuit for flash memory in view of the problem that traditional flash memory is easily erased by mistake during power-off

Method used

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  • Power-down protection circuit and power-down protection sequence circuit for flash memory
  • Power-down protection circuit and power-down protection sequence circuit for flash memory
  • Power-down protection circuit and power-down protection sequence circuit for flash memory

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Embodiment Construction

[0025] In order to make the objects, features and advantages of the present invention more comprehensible, specific implementations of the present invention will be described in detail below in conjunction with the accompanying drawings.

[0026] figure 1 It is a schematic circuit diagram of a power-down protection circuit for flash memory in an embodiment. The power-down protection circuit 100 includes a power monitoring module 110 and an electronic switch unit 120 , the power monitoring module 110 is connected to the electronic switch unit 120 , and the electronic switch unit 120 is used to connect to a write protection pin of a flash memory (Flash). The power monitoring module 100 is used to obtain an external power supply (VDD), and control the electronic switch unit 120 to output a low level when the voltage of the external power supply is lower than the power-down threshold (at this time, the voltage of the central processing unit is still within the rated range) Write-...

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Abstract

The invention relates to a power-down protection sequence circuit for flash memory, which includes an independent power conversion module, a power monitoring module, a write protection module and a reset module; the independent power conversion module is used to convert an external power supply into an internal power supply and pass an independent The output terminal of the power conversion module is output, so that the internal power supply is finally powered off during the power-off process of the external power supply; the power monitoring module is used to obtain the external power supply, and output an alarm signal when the voltage of the external power supply is lower than the power-off threshold . The invention also relates to a power-down protection circuit for flash memory. In the present invention, when the voltage of the external power supply drops below the power-off threshold, the write protection pin of the flash memory is pulled to a low level, and the flash memory is placed in a write-protected state until the end of power-off. Therefore, in the process of power failure, the data stored in the flash memory will not be erased, which improves the security of the stored data.

Description

technical field [0001] The invention relates to an emergency protection circuit device, in particular to a power-down protection circuit for flash memory, and also to a power-down protection sequential circuit for flash memory. Background technique [0002] The English name of flash memory is "Flash Memory", generally referred to as "Flash". Flash memory is a kind of non-volatile (Non-Volatile) memory, which can keep data for a long time without current supply. Its storage characteristics are equivalent to hard disks. This feature is why flash memory can become a variety of portable digital devices. basis of storage media. Flash memory is mainly divided into two categories: NOR type and NAND type. [0003] The storage unit of NAND flash memory adopts a serial structure, and the reading and writing of the storage unit is performed in units of pages and blocks (a page contains several bytes, and several pages form a storage block, and the size of a NAND storage block is 8 to...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C16/06
Inventor 薛孙曦王金桂
Owner SHENZHEN GONGJIN ELECTRONICS CO LTD
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