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Extreme ultraviolet lithography mask and method of manufacturing same

A technology of extreme ultraviolet lithography and mask, which is applied in the field of mask and manufacturing, and can solve problems such as resolution limit

Active Publication Date: 2014-02-19
GLOBALFOUNDRIES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, such conventional optical lithography reaches its resolution limit due to the wavelengths of electromagnetic radiation available for transmissive masks

Method used

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  • Extreme ultraviolet lithography mask and method of manufacturing same
  • Extreme ultraviolet lithography mask and method of manufacturing same
  • Extreme ultraviolet lithography mask and method of manufacturing same

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Embodiment Construction

[0024] The present invention relates to semiconductor structures and fabrication methods, and more particularly, to a mask and fabrication method for use in extreme ultraviolet lithography. According to aspects of the present invention, the reflective film located in the border region of EUV lithography is formed with a phase shift structure that produces destructive interference that reduces the reflectivity of the EUV lithography mask in the border region. interference). In an embodiment, the multilayer reflective film of the EUV lithography mask is formed with a sub-resolution phase shifting grating that scatters light out of the lens, thereby reducing the effective reflectivity of the absorber material at the border region. The grating can be provided by periodic roughness on the surface of the EUV lithography mask substrate, propagating up through the multilayer reflective film, or by trenches etched on top of the multilayer reflective film. In any event, the grating is ...

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Abstract

Extreme ultraviolet lithography (EUVL) masks and methods of manufacturing are provided. A method includes forming a sub-resolution phase shift grating in a multilayer reflective film beneath a border region of an absorber layer of an extreme ultraviolet lithography (EUVL) mask. The sub-resolution phase shift grating reduces a reflectivity of the border region of the mask.

Description

technical field [0001] The present invention relates to semiconductor structures and fabrication methods, and more particularly, to a mask and fabrication method for use in extreme ultraviolet lithography. Background technique [0002] Photolithography is a technique used to apply patterns to the surface of workpieces, such as applying circuit patterns to semiconductor chips or wafers. Traditional optical lithography involves applying electromagnetic radiation to a mask with openings formed therein (i.e., a transmissive mask), so that light or radiation passing through the openings is applied to a workpiece surface coated with a radiation-sensitive substance (i.e., a photolithographic mask). glue) area. However, such conventional optical lithography reaches its resolution limit due to the wavelengths of electromagnetic radiation available for transmissive masks. [0003] An emerging candidate for higher-resolution lithography uses extreme ultraviolet (EUV) light to image p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/24G03F1/30
CPCG03F1/24G03F1/30G03F1/38
Inventor E.E.加拉格G.R.麦金泰尔
Owner GLOBALFOUNDRIES INC