Method for manufacturing finfet devices

Abstract

This aspect discloses a method for manufacturing a fin field effect transistor. To manufacture a FinFET device, you first receive a FinFET precursor. The precursor includes a substrate and fin structures on the substrate. Sidewall spacers may be formed along sidewalls of the fin structures in the precursor. A portion of the fin structure is slotted to form a slotted trench with the sidewall spacer as the upper portion of the fin. The semiconductor structure is grown epitaxially in and continuously over the slotted trench to form an epitaxial structure.

Description

technical field [0001] The present application relates generally to the field of semiconductors and, more particularly, to methods of fabricating FinFET devices. Background technique [0002] The semiconductor integrated circuit (IC) industry is developing rapidly. Due to technological advancements in IC materials and designs, ICs are constantly being updated, and new generations of ICs have smaller but more complex circuits than previous generation ICs. During the development of ICs, the functional density (i.e., the number of interconnected devices per chip area) has generally increased, but the geometry size (i.e., the smallest component (or line) that can be obtained by the manufacturing process) has been reduced. . The advantages of this scale-down process are increased production efficiency and reduced associated costs. [0003] This scaling process also increases the complexity of the IC's processing and fabrication. To achieve these advances, we need similar deve...

AI Technical Summary

Problems solved by technology

While existing FinFET devices and methods of fabricating FinFET devices are generally adequate for their intended use, they are still not perfect

For example, the height and width of the source / drain epitaxial structures change, which will bring challenges to the development of FinFET process

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