A kind of thin film transistor and its preparation method, array substrate and display

Abstract

The invention discloses a thin film transistor and a preparation method thereof, an array substrate and a display, which aims at shortening the process time and improving the production efficiency. The preparation method of the thin film transistor comprises the following steps of depositing a buffer layer and a semiconductor non-crystallizing silicon layer on a substrate; forming an active layer and a storage capacitor lower electrode area on the buffer layer; forming a grid insulation layer on the active layer and the storage capacitor lower electrode area, and forming a grid on the insulation layer; injecting ions into the substrate formed with the grid insulation layer and the grid; forming a first insulation layer on the grid insulation layer and the grid, and forming first through holes in the first insulation layer; forming a source, a drain and a storage capacitor upper electrode on the first insulation layer, and enabling the source and the drain to connect the conductor area formed by the active layer through the first through holes; forming a second insulation layer on the source, the drain and a storage capacitor, and forming second through holes in the second insulation layer; forming a pixel electrode on the second insulation layer, and enabling the pixel electrode to connect with the drain through the second through holes.

Description

technical field [0001] The invention relates to the technical field of displays, in particular to a thin film transistor, a preparation method thereof, an array substrate and a display. Background technique [0002] In planar displays, such as liquid crystal displays, organic electroluminescent displays or inorganic electroluminescent displays, thin film transistors are generally used as switching elements to control pixels, or as driving elements to drive pixels. Thin film transistors can be generally divided into two types according to the properties of silicon thin films: amorphous silicon (a-Si) and polycrystalline silicon (Poly-Si). Compared with amorphous silicon thin film transistors, polycrystalline silicon thin film transistors have higher electron mobility and better performance. Liquid crystal characteristics and less leakage current, so displays made of polysilicon thin film transistors will have higher resolution and faster response speed. Low temperature polysi...

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Problems solved by technology

[0004] In summary, there are many disadvantages in the process of polysilicon thin film transistors, such as: poor pass rate, complicated process, high cost, etc.

Especially in the ion implantation process, when the mask plate during ion implantation is photoresist, the energy of implanted ions can easily cause the curing of the photoresist, resulting in photoresist residue, affecting the next process, and the commonly used polysilicon thin film transistor Compared with the 5 or 6 mask plates of general amorphous silicon thin film transistors, it is more complicated and time-consuming, which seriously reduces the industrial production capacity and increases the cost.

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