Method and device for electron beam melting to remove oxygen from polysilicon and continuous ingot casting
An electron beam smelting and polysilicon technology, applied in the field of metallurgical smelting, can solve the problems of difficult operation, long time and high risk, and achieve the effects of improving production efficiency, reducing time and saving energy consumption
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Embodiment 1
[0037] like figure 1 As shown, the equipment for electron beam smelting polysilicon deoxidation and continuous ingot casting includes a furnace body, and the furnace body 1 is provided with an electron beam smelting component and a continuous ingot casting component, wherein:
[0038] The electron beam melting assembly includes a water-cooled melting crucible 2 installed on the upper part of the furnace body. A concave melting pool (not shown in the drawings) is opened on the melting crucible. One side of the melting crucible is provided with a water-cooled conveyor belt 12. The water-cooled conveyor One side of the belt is flush with the side opening of the smelting crucible, and the other side is inclined downward and is provided with a diversion port 13, and a concave groove is opened on the water-cooled conveyor belt, which is used to guide the polysilicon liquid that is smelted and initially deoxidized to the ingot It flows in the direction of the device and enters the in...
Embodiment 2
[0043] Adopt the device described in embodiment 1, carry out electron beam smelting polysilicon deoxidation and continuous ingot casting process,
[0044] Specific steps are as follows:
[0045] (1) Loading and vacuuming: Clean and dry the polysilicon material with a particle size of 10-12mm, a purity of 99.996%, and an oxygen content of 20ppmw, then put it into the feeding device, and lay 6N polysilicon at the bottom of the quartz crucible of the ingot casting device Ingot bottom material, and vacuum the furnace to 3×10 -2 Pa, the vacuum degree of the electron gun is pumped to 4×10 -3 Pa, preheat the electron gun for 15 minutes;
[0046] (2) Preliminary oxygen removal: Continuously add the polysilicon material in step (1) to the melting crucible of the electron beam melting furnace through the feeding device, start the electron gun for melting, set the electron beam current of the electron gun for melting to 1200mA and melt for 15 minutes Preliminary removal of impurity ox...
Embodiment 3
[0051] Adopt the device described in embodiment 1, carry out electron beam smelting polysilicon deoxidation and continuous ingot casting process,
[0052] Specific steps are as follows:
[0053] (1) Loading and vacuuming: Clean and dry the polysilicon material with a particle size of 24-30mm, a purity of 99.997%, and an oxygen content of 11ppmw, then put it into the feeding device, and lay 6N polysilicon at the bottom of the quartz crucible of the ingot casting device Ingot bottom material, and vacuum the furnace to 4×10 -2 Pa, the vacuum degree of the electron gun is pumped to 4.5×10 -3 Pa, preheat the electron gun for 13 minutes;
[0054] (2) Preliminary oxygen removal: Continuously add the polysilicon material in step (1) to the crucible of the electron beam melting furnace through the feeding device, start the electron gun for melting, set the electron beam current of the electron gun for melting to 800mA and melt for 5 minutes Preliminary removal of impurity oxygen in ...
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