Array substrate, liquid crystal display panel and display device
A technology for array substrates and substrate substrates, applied in transistors, semiconductor/solid-state device components, instruments, etc., can solve the problems of low display quality and small storage capacitance of display devices, and achieve improved display quality, reduced flicker, and increased pixels Effect of voltage retention
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example 1
[0052] Such as figure 2 As shown, the thin film transistor is a bottom gate thin film transistor. In the thin film transistor, the gate electrode 210 is located between the base substrate 100 and the active layer 220, and the gate insulating layer 250 is located between the gate electrode 210 and the active layer 220. , the source electrode 230 and the drain electrode 240 are located above the active layer 220; the first pixel electrode 410 is directly located on the layer above the drain electrode 240 and is directly electrically connected to the drain electrode 240; the second pixel electrode 420 passes through the first insulating layer 500 and The via hole of the second insulating layer 600 is electrically connected to the first pixel electrode 410 .
[0053] Compared with the existing array substrate, the array substrate of the above-mentioned example 1 does not need to add other additional film layers, and only needs to increase the process of preparing the first pixel ...
example 2
[0055] Such as image 3 As shown, the thin film transistor is a bottom gate thin film transistor. In the thin film transistor, the gate electrode 210 is located between the base substrate 100 and the active layer 220, and the gate insulating layer 250 is located between the gate electrode 210 and the active layer 220. , the source electrode 230 and the drain electrode 240 are located above the active layer 220; the first pixel electrode 410 is located between the gate insulating layer 250 and the base substrate 100, and the first pixel electrode 410 passes through the via hole penetrating the gate insulating layer 250 It is electrically connected to the drain electrode 240 ; the second pixel electrode 420 is electrically connected to the drain electrode 240 through a via hole penetrating through the first insulating layer 500 and the second insulating layer 600 .
[0056] Compared with the array substrate of Example 1, the array substrate of the above-mentioned example 2 needs...
example 3
[0058] Such as Figure 4 As shown, the thin film transistor is a top-gate thin film transistor. In the thin film transistor, the source electrode 230 and the drain electrode 240 are located between the base substrate 100 and the active layer 220, and the gate electrode 210 is located above the active layer 220. The gate insulating layer 250 is located between the gate electrode 210 and the active layer 220; the first pixel electrode 410 is located on the upper layer of the drain electrode 240 and is directly electrically connected to the drain electrode 240; the second pixel electrode 420 passes through the first insulating layer 500, The via holes of the second insulating layer 600 and the gate insulating layer 250 are electrically connected to the first pixel electrode 410 .
[0059] Compared with the existing array substrate, the array substrate of the above example 3 does not need to add other additional film layers, and only needs to increase the process of preparing the ...
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