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Light-emitting element

A technology of light-emitting elements and transparent substrates, which is applied in the direction of electrical components, semiconductor devices, circuits, etc., and can solve problems such as brightness loss, poor side light emission, and small light emission angle.

Inactive Publication Date: 2014-06-25
EPISTAR CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As shown in the figure, when the light-emitting stack 110 emits light downward and travels to the side of the substrate 130, as shown at point A in the figure, since the refractive index of the substrate 130 is n=1.7 (taking the sapphire substrate as an example), the packaging resin The refractive index of 160 is n=1.5. Therefore, according to Snell's Law, when the angle of light incident on the surface of the encapsulation resin 160 is greater than the critical angle, as shown in the figure, the light will produce total internal reflection (Total Internal Reflection) However, it cannot be transmitted out of the LED element, as shown by the dotted line, and is even absorbed by the LED element after multiple reflections, resulting in a loss of brightness.
Therefore, such light-emitting diode structures have poor side light emission, and in addition to affecting the brightness, the light emission angle exhibited by it is relatively small.

Method used

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Examples

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Embodiment Construction

[0053] figure 2 It is a schematic diagram of the first embodiment of the present invention. A light-emitting stack 210 is placed on the substrate 230 , and a bonding layer 220 is used to bond the substrate 230 and the light-emitting stack 210 . During encapsulation, the substrate 230 is fixed on an encapsulation carrier 250 with a chip fixing material 240 , and the whole is encapsulated with an encapsulation resin 260 . The light-emitting stack 210 is a semiconductor stack, which includes a first electrical type semiconductor layer 211 , an active layer 212 , and a second electrical type semiconductor layer 213 from top to bottom. The first electrical type semiconductor layer 211 and the second electrical type semiconductor layer 213 are electrically different. For example, the first electrical type semiconductor layer 211 is an n-type semiconductor layer, while the second electrical type semiconductor layer 213 is a p-type semiconductor layer. When external power is applied...

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Abstract

The invention discloses a light-emitting element. The light-emitting element comprises: a semiconductor laminated layer; a transparent substrate including a first material; a bonding layer for bonding the semiconductor laminated layer and the transparent substrate; and a medium which is located in the transparent substrate, wherein the medium includes a second material which is different from the first material.

Description

technical field [0001] The invention relates to a light-emitting element, in particular to a light-emitting element capable of increasing side light emission. Background technique [0002] The structure of a general light-emitting diode element is as follows figure 1 As shown, a light-emitting stack 110 is placed on the substrate 130 , and the substrate 130 and the light-emitting stack 110 are bonded by a bonding layer 120 . During encapsulation, the substrate 130 is fixed on an encapsulation carrier 150 with a chip fixing substance 140 , and the whole is encapsulated with an encapsulation resin 160 . The light-emitting stack 110 is a semiconductor stack, which includes a first electrical type semiconductor layer 111 , an active layer 112 , and a second electrical type semiconductor layer 113 from top to bottom. The first electrical type semiconductor layer 111 and the second electrical type semiconductor layer 113 are electrically different. For example, the first electri...

Claims

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Application Information

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IPC IPC(8): H01L33/48H01L33/58H01L33/46H01L33/22
CPCH01L33/486H01L33/22H01L33/46H01L33/58
Inventor 黄建富姚久琳
Owner EPISTAR CORP
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