Schottky diode semiconductor device and preparation method thereof
A Schottky diode and semiconductor technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problem of increased reverse leakage current, large reverse leakage current, and reduced reverse breakdown voltage capability, etc. question
Active Publication Date: 2017-06-13
CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD
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Problems solved by technology
The work function difference between the metal that constitutes the anode and the N-type single crystal silicon forms a potential barrier. As the leakage current increases, the reverse blocking voltage decreases; however, a higher potential barrier increases the forward conduction turn-on voltage, and at the same time reduces the reverse leakage current and enhances the reverse blocking capability
However, compared with PN junction diodes, traditional planar Schottky diodes have large reverse leakage current and low reverse blocking voltage, especially the temperature coefficient has a large negative impact on leakage current, which directly leads to reverse breakdown Reduced voltage capability
[0005] While the trench Schottky barrier diode rectifier device has a low forward conduction turn-on voltage, it overcomes the shortcomings of the above-mentioned planar Schottky diode. However, the trench Schottky diode still has reverse Insufficient pressure resistance
Method used
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[0021] Figure 1A A semiconductor substrate 101 is shown. The conductivity type of the substrate 101 is usually N-type. It can be understood that the substrate 101 includes a heavily doped N+ type bottom substrate, and includes an opposite bottom substrate epitaxially grown on the bottom substrate. N-type epitaxial layer with relatively low doping concentration. Firstly, a layer of mask layer 200 is formed on the upper surface of the substrate 101, and the photoresist coated thereon, according to the photolithography technology well known to those skilled in the art, after implementing the photolithography process and the etching process, the mask layer 200 can be Etch a plurality of openings in the mask layer 200, and then use the mask layer 200 with the opening pattern as an etching mask, and then etch the substrate 101 to form a plurality of trench upper parts 102a or It is called the top of the groove. Note that it is not an integral groove in the complete sense at this t...
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The invention relates to a diode separating device for a rectifier, and more specifically provides a Schottky diode semiconductor device with a groove structure, and a preparation method thereof. A groove comprises a groove upper portion and a groove lower portion and is filled with a conductive material. Schottky barrier metal covers the upper surface of a substrate and covers above the groove. The respective inner walls of the groove upper portion and the groove lower portion are provided with insulation layers. And the groove lower portion expands laterally until the side wall of the groove lower portion protrudes out of the side wall, which extends along a vertical direction, of the groove upper portion.
Description
technical field [0001] The invention relates to a diode separation device for a rectifier, more precisely, the invention aims to provide a Schottky diode semiconductor device with a trench structure and a preparation method. Background technique [0002] In the AC to DC converter, the rectifier is generally required to have the ability of one-way conduction. Specifically, the rectifier must have a relatively low turn-on voltage and small on-resistance when it is conducting forward conduction, but it requires High blocking voltage and low reverse leakage current. [0003] Schottky diodes have been widely used in power management as rectifier devices. Compared with PN junction diodes, some positive advantages of Schottky diodes are obvious, such as low forward turn-on voltage and fast switching speed. The advantages make it common in switching power supplies and high frequency applications. In addition, the reverse recovery time of the Schottky diode is very short, which is ...
Claims
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IPC IPC(8): H01L29/872H01L29/06H01L21/329
CPCH01L29/0619H01L29/66143H01L29/8725
Inventor 陈世杰黄晓橹沈健蒋建陈逸清
Owner CHINA RESOURCES MICROELECTRONICS (CHONGQING) CO LTD