Method and device for reducing photomask stripes
A photomask and mask technology, which is applied to the photo-engraving process of the pattern surface, the original for photomechanical processing, optics, etc., can solve the problems of stripes on the photomask and errors in the manufacturing process of the photomask. To achieve the effect of reducing the appearance of streaks
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Embodiment 1
[0045] figure 1 The implementation process of the method for reducing the stripes of the photomask provided by the first embodiment of the present invention is shown, and the details are as follows:
[0046] In S101, the accuracy change curve of the overlapping pattern of the pixel pattern and the overlapping part of the scanning belt is measured by the photomask detection plate.
[0047] Because the scanning band and the pixel pattern of the lithography machine equipment show periodic changes, when the overlapping area of the two scanning bands partially overlap the edge of the pixel pattern, the photomask strips will appear in the production. The maximum width of the scanning band of the lithography machine equipment is fixed. In the vertical direction of the scanning band, the energy exposed to the entire photomask plate also changes periodically. The specific lithography equipment exposure energy cycle is as follows figure 2 As shown, the overlapping area with the scanning zo...
Embodiment 2
[0056] Image 6 The flow chart for reducing the stripes of the photomask provided by the second embodiment of the present invention is shown, and the details are as follows:
[0057] S601, according to the spot size of the lithography machine equipment and the number of beams, calculate the pattern shrinkage coefficient of the fringe caused by the difference in beam energy for each pixel pattern.
[0058] Since the lithography machine has a multi-beam lithography machine, for a multi-beam lithography machine, the energy of the beam will be different between multiple beams. When different beams are finally subjected to lithography, the difference in beam energy will cause The exposed photomask is different, resulting in stripes appearing on the final photomask. Therefore, for multi-beam lithography equipment, according to the spot size of the lithography equipment, the number of beams is calculated for each pixel pattern caused by the difference in beam energy Shrinkage factor. Spe...
Embodiment 3
[0064] Figure 7 The flow chart for reducing the stripes of the photomask provided by the third embodiment of the present invention is shown. For ease of description, only the parts related to the embodiment of the present invention are shown.
[0065] S701, design and manufacture photomask inspection board;
[0066] Among them, the photomask inspection board uses the highest design capability of photomask manufacturing equipment or flat panel display exposure equipment to design the smallest seam.
[0067] S702: Perform matrix measurement on the glue or light intensity of different areas of the photomask plate through the photomask detection plate according to the division interval, measure each matrix point, and obtain the deviation of each matrix point.
[0068] Perform matrix measurement on the entire page at intervals of 5mm-20mm, such as 700X800, the window size of the exposure machine is 600X700, and at 10mm intervals, the measurement accuracy should reach the light of the litho...
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