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Graylevel-type optical mask, thin film transistor, and active element array substrate

A thin film transistor and photomask technology, applied in the field of photomasks, can solve the problems of high unit price and increased manufacturing cost of half-tone photomasks, and achieve the effect of reducing the risk of high current explosion

Inactive Publication Date: 2014-10-01
AU OPTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the unit price of the half-tone photomask is higher than that of other generally used photomasks, which increases the manufacturing cost.

Method used

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  • Graylevel-type optical mask, thin film transistor, and active element array substrate
  • Graylevel-type optical mask, thin film transistor, and active element array substrate
  • Graylevel-type optical mask, thin film transistor, and active element array substrate

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Embodiment Construction

[0075] figure 1 It is a schematic top view of a gray scale (gray scale) type photomask according to an embodiment of the present invention.

[0076] Please refer to figure 1 , the grayscale photomask 10 includes a substrate 100 , a source mask pattern 102 , a drain mask pattern 104 and a dummy pattern 106 . The grayscale photomask 10 is used to form thin film transistors.

[0077] The substrate 100 is, for example, a glass substrate, a quartz substrate, or a transparent substrate made of other materials.

[0078]The source mask pattern 102 is disposed on the substrate 100 and corresponds to the source of the thin film transistor. The material of the source mask pattern 102 is, for example, a light blocking material such as chrome.

[0079] The drain mask pattern 104 is disposed on the substrate 100 and corresponds to the drain of the thin film transistor. The material of the drain mask pattern 104 is, for example, a light blocking material such as chrome.

[0080] The du...

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Abstract

The invention discloses a graylevel-type optical mask, a thin film transistor, and an active element array substrate. The gray level-type optical mask is suitable for the exposure production technology to identify the source, the drain, and the channel layer of the thin film transistor. The gray level-type optical mask comprises a substrate, a source optical mask pattern, a drain optical mask pattern, and a simulation pattern. The source optical mask pattern is disposed on the substrate, and is corresponding to the source. The drain optical mask pattern is disposed on the substrate, and is corresponding to the substrate, and is corresponding to the drain.The simulation pattern is disposed on the substrate, and is disposed between the source optical mask pattern and the drain optical mask pattern, and is provided with slits corresponding to the position between the simulation pattern and the source optical mask pattern and the position between the simulation pattern and the drain optical mask pattern.

Description

technical field [0001] The invention relates to a photomask, and in particular to a gray scale photomask for forming a thin film transistor and an active element array substrate including the thin film transistor. Background technique [0002] With the rapid development of technology, display panels can be seen everywhere in today's society, and are widely used in various electronic products such as tablet computers, smart phones or flat-screen TVs. In the current display panel, in order to avoid damage to the display panel due to high current explosion and residual defects in the manufacturing process, it is usually necessary to increase the channel length of the thin film transistor. [0003] Generally speaking, in the prior art, a half tone mask is used to fabricate thin film transistors with increased channel lengths. However, the unit price of the half-tone photomask is higher than that of other generally used photomasks, which increases the manufacturing cost. Theref...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/32H01L29/786H01L27/12
Inventor 赖君伟张宗隆沈柏元廖达文
Owner AU OPTRONICS CORP