Trench type floating junction carborundum SBD device based on ion implantation and manufacturing method thereof

A technology of ion implantation and silicon carbide junction, which is applied in the field of microelectronics, can solve the problems of narrowing the conductive channel, reducing the forward conduction characteristics of the device, and reducing the breakdown voltage of the device, so as to achieve short switching time and overcome the low breakdown voltage , Improve the effect of breakdown voltage

Inactive Publication Date: 2014-10-01
XIDIAN UNIV
View PDF4 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the buried layer introduced by the floating junction silicon carbide SBD narrows the conduction channel of the forward conduction current, which reduces the forward conduction characteristics of the device.
However, the corners of the groove of the grooved SiC SBD lead to the peak electric field of the device under the action of the reverse voltage, which reduces the breakdown voltage of the device.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Trench type floating junction carborundum SBD device based on ion implantation and manufacturing method thereof
  • Trench type floating junction carborundum SBD device based on ion implantation and manufacturing method thereof
  • Trench type floating junction carborundum SBD device based on ion implantation and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0058] Step a1, for N + The samples on SiC substrates are cleaned using standard RCA process, such as image 3 As shown in a,

[0059] Using the VP508 epitaxial growth system at a doping concentration of 1×10 18 cm -3 N + Epitaxial growth of a sample on a SiC substrate - epitaxial layer, such as image 3 Shown in b.

[0060] The thickness of the epitaxial layer is 5 μm, and the doping concentration of nitrogen ions is 3x10 15 cm -3 , the growth pressure is 100mbar, the growth temperature is 1600°C, the reaction gases are silane and propane, and the growth time is 1h.

[0061] Step b1, ion implantation to form a P+ ion implantation region, such as image 3 as shown in c;

[0062] Step b11, at 650°C, using aluminum as a mask, perform three selective ion implantations on the primary N- epitaxial layer, so that the aluminum ions form a stable box-like distribution, the implantation energy is 450KeV, 250KeV and 120KeV, and the implantation dose is 8x10 13 cm -2 , 6x10 ...

Embodiment 2

[0078] Step a2, using standard RCA process to wash N + SiC substrate samples;

[0079] Using the VP508 epitaxial growth system at a doping concentration of 5×10 1S cm-3 N + Epitaxial growth of a sample on a SiC substrate - The epitaxial layer, the thickness of the epitaxial layer is 10 μm, and the nitrogen ion doping concentration is 5x10 15 cm -3 , the growth pressure is 100mbar, the growth temperature is 1600°C, the reaction gases are silane and propane, and the growth time is 12min.

[0080] Step b2, at 650°C, using aluminum as a mask to perform three selective ion implantations on the primary N- epitaxial layer, the implantation energy is 450keV, 250keV and 120keV, and the implantation dose is 8x10 13 cm -2 , 6x10 13 cm -2 and 3x10 13 cm -2 , The doping concentration of aluminum ions after implantation is 3x10 18 cm -3 , the ion implantation depth is 0.5 μm.

[0081] After ion implantation, annealing is carried out in a silane atmosphere, the annealing tempera...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a trench type floating junction carborundum SBD device based on ion implantation. The carborundum SBD device comprises metal, a SiO2 isolation medium, trenches, a primary N- epitaxial layer, a P+ ion implantation area, a secondary N- epitaxial layer, an N+ substrate area and an ohmic contact area, wherein the trenches are aligned to the P+ ion implantation area vertically and are identical with the P+ ion implantation area in shape, or the trenches are aligned to a non-P+ ion implantation area vertically and are identical with the non-P+ ion implantation area in shape, and the trenches and the P+ ion implantation area are bar-shaped trenches and floating junctions which are distributed horizontally. The trench type floating junction carborundum SBD device based on the ion implantation combines the advantages of a trench type carborundum SBD and a floating junction carborundum SBD, the breakdown voltage is raised, and on resistance is lowered.

Description

technical field [0001] The invention relates to the technical field of microelectronics, in particular to a floating junction silicon carbide SBD device with a trench and a manufacturing method thereof. Background technique [0002] Silicon carbide material has better electrical properties than Si, which makes it very suitable for high voltage, high power and high frequency fields. And its development pace has surpassed other wide bandgap semiconductors, and it has wider applications than other wide bandgap semiconductors. [0003] The SiC material has a large band gap, which can reach more than 3eV, three times that of Si, and the critical breakdown electric field can reach more than 2MV / cm, which is an order of magnitude higher than Si. In high-voltage and high-power devices, thicker light The doped epitaxial layer is used to obtain a higher reverse breakdown voltage, but this will lead to a decrease in the forward conduction characteristics, which makes SiC show a huge a...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & AuthorityApplications(China)
IPC IPC(8): H01L29/872H01L29/06H01L21/329
CPCH01L29/872H01L29/0623H01L21/26513H01L29/66143
Inventor宋庆文杨帅汤晓燕张艺蒙贾仁需张玉明王悦湖
OwnerXIDIAN UNIV