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Full-color micro oled display structure and its manufacturing process

A display and display driving technology, applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., to achieve the effect of improving the light output rate

Active Publication Date: 2016-08-31
YUNNAN NORTH OLIGHTEK OPTO ELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The content of the present invention is to use the laser transfer printing technology to control the laser transfer printing process when it is impossible to use metal shutters to vapor-deposit red, green and blue materials on the R, G, and B sub-pixels to form a full-color display. Fabrication of full-color micro-OLED displays

Method used

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  • Full-color micro oled display structure and its manufacturing process
  • Full-color micro oled display structure and its manufacturing process
  • Full-color micro oled display structure and its manufacturing process

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Embodiment 1

[0039] Embodiment 1: the full-color micro-OLED display of the present invention comprises a silicon substrate with display drive circuit and an OLED full-color micro-OLED display formed on the silicon substrate, it is characterized in that this full-color micro-OLED display comprises:

[0040] an anode layer;

[0041] A hole functional layer comprising at least a hole injection layer and a hole transport layer;

[0042] a light-emitting layer between the hole-functional layer and the electron-functional layer;

[0043] An electron functional layer comprising at least an electron injection layer and an electron transport layer;

[0044] a cathode layer;

[0045] a sealing film layer and a glass cover;

[0046] The present invention uses laser transfer technology to prepare full-color micro-OLED display, and is characterized in that specifically comprising the following steps:

[0047] (1) Evaporate the anode on the silicon substrate, the anode material is Al, and the thickn...

Embodiment 2

[0064] Embodiment 2: the full-color micro-OLED display of the present invention comprises a silicon substrate with display drive circuit and an OLED full-color micro-OLED display formed on the silicon substrate, it is characterized in that this full-color micro-OLED display comprises:

[0065] an anode layer;

[0066] A hole functional layer comprising at least a hole injection layer and a hole transport layer;

[0067] a light-emitting layer between the hole-functional layer and the electron-functional layer;

[0068] An electron functional layer comprising at least an electron injection layer and an electron transport layer;

[0069] a cathode layer;

[0070] a sealing film layer and a glass cover;

[0071] The present invention uses laser transfer technology to prepare full-color micro-OLED display, and is characterized in that specifically comprising the following steps:

[0072] (1) Evaporate the anode on the silicon substrate, the anode material is Ag, and the thickn...

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Abstract

Full-color micro-OLED display structure and its preparation process, relating to the technical field of full-color micro-organic light-emitting display devices with silicon wafers as substrates, especially the top-emission full-color micro-OLED display structure and its preparation process formed by laser transfer printing technology, its characteristics The method is to prepare a light-emitting layer by using a laser transfer printing method, and then use it in a full-color micro OLED display. A full-color micro-OLED display structure and its preparation process of the present invention adopts laser transfer printing technology and is applied to the full-color micro-OLED display structure. Compared with the traditional OLED display structure using a color filter layer, the light output rate is obviously improved.

Description

technical field [0001] The invention relates to the technical field of a full-color micro-organic light-emitting display device with a silicon chip as a substrate, in particular to a top-emitting full-color micro-OLED display structure formed by laser transfer technology and a preparation process thereof. Background technique [0002] The OLED display structure has a series of characteristics such as self-illumination, low-voltage DC drive, full curing, wide viewing angle, light weight, large-size and bendable panels, simple process, etc., and has the potential of low cost, which can meet the needs of today's information technology. The era's requirements for higher performance and greater information capacity of display technology have become one of the hottest topics in the scientific and industrial circles. [0003] Micro-OLED display refers to organic light-emitting devices driven by silicon-based CMOS with a display size of less than 1 inch, with pixels up to 800×600 or...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/32H01L51/50H01L51/52H01L51/56
Inventor 段瑜朱亚安张筱丹王光华季华夏
Owner YUNNAN NORTH OLIGHTEK OPTO ELECTRONICS TECH