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A kind of radio frequency ldmos device and preparation method thereof

A device and radio frequency technology, applied in the field of radio frequency LDMOS devices and their preparation, can solve the problem of inability to optimize the breakdown voltage of radio frequency devices, and achieve the effect of changing the breakdown voltage and optimizing performance

Active Publication Date: 2017-04-26
JIANGSU CAS IGBT TECHNOLOGY CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0014] The purpose of the embodiment of the present invention is to provide a radio frequency LDMOS device and its preparation method, so as to solve the problem that the breakdown voltage of the radio frequency device cannot be optimized in the prior art

Method used

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  • A kind of radio frequency ldmos device and preparation method thereof
  • A kind of radio frequency ldmos device and preparation method thereof
  • A kind of radio frequency ldmos device and preparation method thereof

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Embodiment 1

[0046] Such as figure 2 Shown is a schematic diagram of the LDMOS device structure obtained by ISE TCAD process simulation provided by the embodiment of the present invention. For the convenience of description, only the parts related to the embodiment of the present invention are shown, including:

[0047] Resistivity 0.05~0.15Ω / cm 3 P+ silicon substrate 201 .

[0048] In an embodiment of the present invention, a radio frequency LDMOS (Lateral Double-diffused MOS, referred to as: lateral double-diffused field effect transistor) device is fabricated on a P+ silicon substrate, and the radio frequency LDMOS device first includes: a resistivity of 0.05 to 0.15Ω / cm 3 P+ silicon substrate 201 .

[0049] Epitaxially formed on the P+ silicon substrate with a thickness of 9 μm and a doping concentration of 6*10 14 cm -3 ~8*10 14 cm -3 P-type epitaxial region 202 .

[0050] In the embodiment of the present invention, on the P+ silicon substrate 201 there is an epitaxial layer...

Embodiment 2

[0095] Such as image 3 Shown is a flowchart of a method for fabricating a radio frequency LDMOS device provided by an embodiment of the present invention, and the method includes the following steps:

[0096] In this embodiment, the thickness parameter of the P-type epitaxial region is first obtained, and the relevant parameters of the radio frequency LDMOS device are obtained according to the preset calculation formula and the obtained P-type epitaxial region thickness parameter, and finally prepared according to the P-type epitaxial region thickness parameter and the relevant parameters The radio frequency LDMOS device, its preparation process specifically includes:

[0097] In step S301, the preparation resistivity is 0.05~0.15Ω / cm 3 P+ silicon substrate.

[0098] In the embodiment of the present invention, a radio frequency LDMOS (Lateral Double-diffused MOS, referred to as: lateral double-diffused field effect transistor) device is fabricated on a P+ silicon substrate....

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Abstract

The invention is suitable for the field of integrated circuit preparing and provides a radio frequency LDMOS device and a preparing method thereof. The radio frequency LDMOS device comprises a P+ silicon substrate, a P-type epitaxial region formed on the P+ silicon substrate in an epitaxial mode, a P+ sinking region, a source region, a polysilicon gate, a channel region, a drift region and a drain region. According to the radio frequency LDMOS device and the preparing method thereof, the thickness parameter of the P-type epitaxial region of the radio frequency LDMOS device is adjusted, so that the breakdown voltage of the radio frequency LDMOS device is changed, and the performance of the radio frequency LDMOS device is optimized.

Description

technical field [0001] The invention belongs to the field of integrated circuit manufacturing, and in particular relates to a radio frequency LDMOS device and a preparation method thereof. Background technique [0002] Lateral Double-diffused MOS (LDMOS) is a radio frequency power device with great market demand and broad development prospects. In the field of radio frequency wireless communication, base stations and long-distance transmitters almost all use silicon-based LDMOS high-power transistors; in addition, LDMOS is also widely used in radio frequency amplifiers, such as HF, VHF and UHF communication systems, pulse radar, industrial, scientific and medical applications , Avionics and WiMAXTM communication systems and other fields. Because LDMOS has the advantages of high gain, high linearity, high withstand voltage, high output power, and easy compatibility with CMOS technology, silicon-based LDMOS transistors have become a new hot spot in radio frequency semiconduct...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78H01L29/36H01L21/336
CPCH01L29/086H01L29/66681H01L29/7816
Inventor 杜寰
Owner JIANGSU CAS IGBT TECHNOLOGY CO LTD
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