Unlock instant, AI-driven research and patent intelligence for your innovation.

Numerical representation of increasing lifespan of solid-state storage devices

A solid-state storage, memory technology, applied in static memory, program control using stored programs, information storage, etc., can solve problems such as loss, data destruction, and shortening of SSD life.

Inactive Publication Date: 2017-08-15
EMPIRE TECH DEV LLC
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Over time, these semiconductor devices may experience wear and tear as data is written to and read from the SSD, which can lead to data corruption and / or loss, shortening the life of the SSD

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Numerical representation of increasing lifespan of solid-state storage devices
  • Numerical representation of increasing lifespan of solid-state storage devices
  • Numerical representation of increasing lifespan of solid-state storage devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0016] The following description sets forth various examples along with specific details to provide a thorough understanding of claimed subject matter. It will be understood by those skilled in the art that claimed subject matter may be practiced without some or more of the specific details disclosed herein. Furthermore, in some instances, well-known methods, procedures, systems, components and / or circuits have not been described in detail so as not to unnecessarily obscure claimed subject matter.

[0017] In the following detailed description, reference is made to the accompanying drawings which form a part hereof. In the drawings, similar symbols typically identify similar components, unless context dictates otherwise. The illustrative embodiments described in the detailed description, figures, and claims are not meant to be limiting. Other embodiments may be utilized, and other changes may be made, without departing from the spirit or scope of the subject matter presented...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

Techniques and implementations for increasing the lifetime of solid state storage devices are generally disclosed.

Description

Background technique [0001] Unless otherwise indicated herein, the approaches described in this section are not prior art to the claims in this application and are not admitted to be prior art by inclusion in this section. [0002] The storage system may include solid state storage devices such as solid state drives (SSDs). An SSD may include multiple semiconductor devices. Over time, these semiconductor devices may experience wear and tear as data is written to and read from the SSD, which can lead to data corruption and / or loss, shortening the life of the SSD. Contents of the invention [0003] This disclosure describes some example methods, apparatuses, and systems for increasing the lifetime of solid-state storage devices. The solid state storage device may include a memory control module. Some exemplary methods may include: at a memory control module, receiving data for a write operation; converting the received data into complementary representation data, wherein th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G06F3/06G06F9/06G06F13/14
CPCG06F3/0619G06F3/064G06F3/0679G06F3/06G06F3/0616G06F9/06G06F13/14Y02D10/00G06F12/0246G06F2212/1036G11C16/349
Inventor 吴贤午
Owner EMPIRE TECH DEV LLC
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More