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Bi-directional switch using series connected N-type MOS devices in parallel with series connected P-type MOS devices

A technology of MOS devices connected in series, applied in the field of bidirectional switches, can solve the problems of high cost and time-consuming

Active Publication Date: 2015-01-21
ANALOG DEVICES INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, multiple processes (e.g. conventional NDMOS process plus conventional PDMOS process) are required to form a single switch with two types of series connections, which would be costly and time consuming

Method used

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  • Bi-directional switch using series connected N-type MOS devices in parallel with series connected P-type MOS devices

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Embodiment Construction

[0008] The present invention relates to a bidirectional switch formed using a pair of series-connected N-type MOS devices connected in parallel with a pair of series-connected P-type MOS devices. In one embodiment, the MOS device is a DMOS device. The switch can be operated as a rail-to-rail switch, meaning that the input to the switch can vary between the value of the positive supply rail (LHI) and the value of the negative supply rail (VSS) without adversely affecting switch operation. LHI and VSS are not shown in the figures and represent the power supplies for the circuits that generate the switching inputs. For example, LHI and VSS can power an amplifier circuit that boosts the voltage level of the input signal before the input is sent to the switch.

[0009] figure 1 A schematic diagram of a DMOS switch 10 according to an exemplary embodiment of the present invention is shown. The switch 10 includes a pair of series-connected PDMOS devices mp29 / mp30 and a pair of seri...

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Abstract

A bi-directional switch circuit includes a pair of N-type MOS devices connected in series with a common source terminal, and a pair of P-type MOS devices connected in series with a common source terminal. The series connected N-type devices are connected in parallel with the series connected P-type devices in a configuration that includes a first input / output (I / O) point of the switch circuit being connected to a drain of a first one of the N-type devices and a drain of a first one of the P-type devices. The parallel configuration also includes a second I / O point of the switch circuit being connected to a drain of a second one of the N-type devices and a drain of a second one of the P-type devices.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit under 35 U.S.C. §119(e) of U.S. Provisional Patent Application No. 61 / 613,269 and U.S. Provisional Patent Application No. 61 / 613,260, both filed March 20, 2012, The contents of which are hereby incorporated by reference in their entirety. Background technique [0003] Two NDMOS devices can be connected in series with their sources connected to each other and their gates connected to each other to form an NDMOS switch. Two PDMOS devices can also be connected in series, with their sources connected to each other and their gates connected to each other to form a PDMOS switch. However, a combination of series-connected NDMOS and series-connected PDMOS devices has never been used to form a switch. The reason these two types of series connections are not combined into a single switch is that, in conventional DMOS fabrication, one device type has to have its source connected to the silicon ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/747
CPCH03K17/6872H03K2217/0054
Inventor D·埃亨尼J·O·邓拉
Owner ANALOG DEVICES INC
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