A method for controlling the critical dimensions of contact holes

A key size and control method technology, applied in material size control, non-electric variable control, control/regulation system, etc., can solve the problem of time-consuming one to two days, rising cost, high cost, and achieve higher utilization rate, The effect of reducing maintenance times and maintaining yield

Active Publication Date: 2017-03-01
SHANGHAI HUALI MICROELECTRONICS CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The disadvantage of this method is that it is time-consuming and expensive
Generally, it takes one working day to do a cavity maintenance, plus the testing work brought about by it, the whole maintenance process takes one to two days, and the cost will also increase due to the replacement of parts

Method used

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  • A method for controlling the critical dimensions of contact holes

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Embodiment Construction

[0036] The specific embodiment of the present invention will be further described in detail below in conjunction with the accompanying drawings.

[0037] In the following specific embodiments of the present invention, please refer to figure 1 , figure 1 It is a flow chart of a method for controlling the key dimension of a contact hole in the present invention. like figure 1 As shown, the control method of the contact hole critical dimension of the present invention is used for the contact hole etching process, comprising the following steps:

[0038] As shown in block S01, step 1: provide a plasma dry etching chamber using MFC to control the flow rate of etching gas, and perform contact hole etching on a batch of wafers according to the setting value of the etching gas flow rate specified in the etching process menu.

[0039] The plasma dry etching chamber uses MFC (Mass Flow Controller, mass flow controller) to precisely control the flow of etching gas. When the cavity of...

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Abstract

The invention discloses a contact hole critical size control method. When the critical size of a contact hole needs to be adjusted, the voltage set of the zero point of an MFC is changed, the MFC is made to be provided with the zero point initial flow corresponding to the required etching gas flow adjustment increment value, and the actual etching gas flow is changed according to the etching gas flow set value specified by a process menu through the MFC, so that fine adjustment of the critical size of the contact hole can be achieved without modifying the process menu, the unnecessary PM times are reduced on the premise of maintaining stable process control, and time and cost are saved.

Description

technical field [0001] The invention relates to the technical field of semiconductor integrated circuit manufacturing, and more particularly, to a method for controlling the key dimension of a contact hole. Background technique [0002] Contact etch (CT etch for short) is an important step in semiconductor manufacturing. Contact hole etching uses photoresist (PR) as a mask to carve a vertical hole (that is, a contact hole) on the oxide film and nitride film under the photoresist, which is used to connect the underlying device through the contact hole. The wires (filled in the contact holes) communicate with the upper structure (not shown). The size of the contact hole is directly related to the capacitance, resistance and RC delay of the wiring. Therefore, the critical dimension (CD) of the contact hole becomes a very important parameter. [0003] The etching of the contact hole is realized by using a plasma dry etching (Plasma Dry Etch) process. Plasma dry etching is to ...

Claims

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Application Information

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Patent Type & AuthorityPatents(China)
IPC IPC(8): G05D5/00H01L21/027
Inventor罗永坚张颂周任昱吕煜坤朱骏张旭升
OwnerSHANGHAI HUALI MICROELECTRONICS CORP