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Method and device for increasing writing speed of nand flash

A writing speed and flash memory technology, which is applied in the field of flash memory writing, can solve the problem of not fast enough flash data writing, so as to improve the writing efficiency, solve the problem of not fast enough writing speed, and reduce the number of accesses

Active Publication Date: 2015-04-08
FUZHOU ROCKCHIP SEMICON
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Problems solved by technology

[0003] For this reason, need to provide a kind of new method of improving flash memory write speed, solve the problem that flash memory data writing is not fast enough under the prior art

Method used

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  • Method and device for increasing writing speed of nand flash
  • Method and device for increasing writing speed of nand flash
  • Method and device for increasing writing speed of nand flash

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Embodiment Construction

[0027] In order to explain in detail the technical content, structural features, achieved goals and effects of the technical solution, the following will be described in detail in conjunction with specific embodiments and accompanying drawings.

[0028] see figure 1 , is a kind of method for improving flash memory write speed of the present invention, and this method starts from step S101: receive random write request, cache random write request; Then carry out judging step S102 when the data amount of the random write request of cache exceeds certain threshold value , performing step S103 to combine multiple random write requests into one combined write request, and then write the combined write request into the flash memory. Specifically, the random write request refers to a write data request whose size is smaller than the size of a page unit. figure 1 In some embodiments shown, a random write request is received first, and then cached in a random write request queue in me...

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Abstract

Disclosed is a method for increasing the writing speed of a nand flash. The method comprises the following steps that random writing requests are received, the random writing requests are cached, when the data volume of the cached random writing requests is larger than a certain threshold value, the random writing requests are merged into a merged writing request, and then the merged writing request is written into the nand flash. The writing requests which are received continuously are classified and merged, the addresses of the writing requests are judged, then operation such as further merging is conducted, finally the merged writing requests are written into the nand flash in sequence, and therefore the frequency of access to the nand flash is effectively reduced, writing efficiency of the nand flash is improved, and the problem that the writing speed of the nand flash is low is solved.

Description

technical field [0001] The invention relates to a method for writing flash memory, in particular to a method for improving the writing speed of Nand Flash. Background technique [0002] Nand Flash flash memory is programmed in units of pages and erased in units of blocks. With the advancement of Nand Flash manufacturing process, the size of the physical page has also increased, from the original 4KB, 8KB to 16KB, and may continue to increase in the future. Applications located on Nand Flash, such as file systems or databases, read and write in units of sectors (512 bytes). Therefore, there are a large number of random write operations smaller than the page size of Nand Flash in practice. Therefore, improving the random write speed of Nand Flash is very important for improving system performance. However, the existing technology is very slow for processing random writes smaller than the size of the Nand Flash page, and the random write performance is very poor. The prior ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G06F3/06G06F12/02
CPCG06F3/0656G06F3/0679G06F12/0246
Inventor 陈奋
Owner FUZHOU ROCKCHIP SEMICON
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