The invention relates to the technical field of semiconductors, and discloses a double-gate two-dimensional
transistor for multifunctional storage and logic calculation, which comprises a substrate, a floating gate layer, a tunneling layer, a channel layer, a top gate insulating layer, a
bottom gate electrode, a top gate
electrode, a source
electrode and a drain electrode, the substrate is an N-type single-polished
silicon oxide wafer, the floating gate layer is a
graphene layer, the tunneling layer is a
hexagonal boron nitride layer, the channel layer is a
molybdenum disulfide layer, and the top gate insulating layer is a
hexagonal boron nitride layer; the floating gate layer is arranged on the upper surface of the substrate, the tunneling layer covers the upper surface of the floating gate layer, the channel layer is arranged on the upper surface of the tunneling layer, and the top gate insulating layer covers the upper surface of the channel layer. By means of a heterogeneous stack structure of h-BN / MoS
graphene and a double-gate independent regulation and control mechanism, single device integration of
light perception, nonvolatile storage and logic operation is achieved, additional splicing links of sensing, storage and calculation units in a traditional
system are omitted, and a
hardware architecture is greatly simplified.