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A silicon wafer fine polishing composition and preparation method thereof

A polishing composition and silicon wafer polishing technology, which is applied in the field of polishing composition to avoid over-corrosion, achieve balance, and reduce micro-scratches and micro-defects

Inactive Publication Date: 2017-04-05
SHENZHEN LEAGUER MATERIAL +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The invention overcomes a series of defect problems caused by particles in the silicon wafer fine polishing liquid in the prior art during the polishing process, and discloses a silicon wafer fine polishing composition and a preparation method that can realize near-limit polishing of silicon wafers

Method used

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  • A silicon wafer fine polishing composition and preparation method thereof
  • A silicon wafer fine polishing composition and preparation method thereof
  • A silicon wafer fine polishing composition and preparation method thereof

Examples

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Embodiment Construction

[0034] Below by embodiment and comparative example (do not use the nano silica sol of 0.1~10nm and do not add the hydroxy carboxyl acidic compound and the hydroxy nitrogen-containing basic compound of the present invention) the present invention will be further elaborated, certainly should not in any case construed as limiting the scope of the invention.

[0035] The specific added components and edge polishing results are shown in the attached table. Unless otherwise specified, the content of the added compounds is calculated by weight. The acidic silica sol used in the examples in the attached table has a pH of 2.5 and an average particle size of The acidic silica sol used in the comparative example has a pH of 3.5 and an average particle diameter of 30 nm.

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Abstract

The invention relates to a composition for finishing polish of a silicon wafer and a preparation method of the composition and relates to the field of chemical mechanical polishing. The composition comprises silicon dioxide sol, a hydroxyl nitrogen-containing alkaline compound, a hydroxyl carboxyl acidic compound, an alkaline compound, a high-molecular compound, a surfactant and deionized water, wherein the particle size of grinding particles in the silicon dioxide sol is 0.1nm to 10nm. According to the composition disclosed by the invention, polishing particles of which the particle size is reduced to a plurality of nanometers are adopted, the hydroxyl nitrogen-containing alkaline compound and the hydroxyl carboxyl acidic compound for stabilizing the polishing particles are also adopted, and the components have the function of effectively maintaining the stability and dispersity of particles, so that the precision and quality of the polished surface of the silicon wafer are improved.

Description

technical field [0001] The invention relates to the field of chemical mechanical polishing (CMP), in particular to a fine polishing composition capable of realizing near-limit polishing of silicon wafers. Background technique [0002] The integrated circuit silicon substrate wafer is gradually developing to a diameter of 450mm, which puts forward higher requirements for processing accuracy, surface roughness, surface defects, and surface cleanliness. According to the technical requirements of SIA, the total thickness variation (TTV) of the silicon wafer surface is less than 0.2μm, the surface roughness reaches the sub-nanometer level, and the particles of 0.05μm on the surface of the silicon wafer are less than 50 / piece. A surface with high planarization, extremely low surface roughness, and extremely low microscopic defects has become a common requirement in the manufacture of next-generation high-tech electronic products, and these requirements are even close to the limit....

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C09G1/02H01L21/304
CPCC09G1/02H01L21/304
Inventor 潘国顺顾忠华龚桦邹春莉罗桂海王鑫陈高攀
Owner SHENZHEN LEAGUER MATERIAL
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