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Test method of thin-film battery micro-short circuit

A technology of thin-film batteries and testing methods, which is applied in the direction of measuring electricity, measuring devices, measuring electrical variables, etc., can solve the problems of micro-short circuit, scrapping, and degradation of the electrical performance of solar cells, etc., and achieve the effect of avoiding micro-short circuit.

Inactive Publication Date: 2015-04-29
江苏武进汉能薄膜太阳能有限公司
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  • Application Information

AI Technical Summary

Problems solved by technology

[0002] In the production process of thin-film solar cells, due to the production environment, production equipment, raw materials and other reasons, it is easy to have micro-short circuit phenomenon of the battery.
[0003] At present, the monitoring of the production process of thin-film solar cells, especially the monitoring of electrical performance parameters, mainly depends on the I-V tester. According to the results of the I-V test and the research on the production process, a preliminary judgment can be made on the electrical performance degradation caused by the micro-short circuit. The location cannot give a clear result, which will cause trouble for the follow-up improvement work

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] The test method of the thin-film battery micro-short circuit of the present embodiment, comprises the following steps:

[0018] ①. Apply a reverse voltage of 5V ~ 7V to the positive and negative electrodes of the thin film battery and keep it for 800ms ~ 5s. The holding time of the reverse voltage is 800ms for each cell of thin-film battery or 2s to 5s for each cell and then five cells. The current of the reverse voltage is an adjustable current with an adjustable range of 1000mA-3000mA. When the thin-film battery is a single-junction, double-junction, triple-junction or CIGS thin-film solar cell, the applied reverse voltage is a constant voltage, and the voltage level is required to be less than the reverse breakdown voltage of a single solar cell.

[0019] ②. Use infrared imaging equipment to observe the pressed thin-film battery;

[0020] ③. In the micro-short circuit position, due to the current passing through it, it will generate heat, and different states will ...

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PUM

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Abstract

The invention discloses a test method of a thin-film battery micro-short circuit. The test method comprises the following steps that firstly, a backward voltage is applied to the positive electrode and the negative electrode of a thin-film battery for 800 ms to 5 s; secondly, an infrared imaging device is used for observing the thin-film battery to which the voltage is applied; thirdly, the micro-short circuit gives off heat due to current passing, different states can be displayed in the infrared imaging device, and therefore the micro-short circuit position can be accurately found. By means of the test method, the micro-short circuit position can be quickly and accurately found when a micro-short circuit occurs, and the test method indicates directions for technology improving.

Description

technical field [0001] The invention relates to a method for testing the micro-short circuit of a thin film battery. Background technique [0002] In the production process of thin-film solar cells, due to the production environment, production equipment, raw materials and other reasons, it is easy to have micro-short circuit of the battery. [0003] At present, the monitoring of the production process of thin-film solar cells, especially the monitoring of electrical performance parameters, mainly depends on the I-V tester. According to the results of the I-V test and the research on the production process, a preliminary judgment can be made on the electrical performance degradation caused by the micro-short circuit. The location cannot give a clear result, which will cause trouble for subsequent improvement work. Contents of the invention [0004] The purpose of the present invention is to provide a testing method capable of quickly and accurately finding the location of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/02
Inventor 冯电波王勇杨春秀
Owner 江苏武进汉能薄膜太阳能有限公司
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