Unlock instant, AI-driven research and patent intelligence for your innovation.

Back contact design of solar cell and manufacturing method thereof

A technology for solar cells and back contact layers, which is applied in the field of solar cells and can solve problems such as reducing the efficiency of solar cells

Active Publication Date: 2017-04-05
TAIWAN SEMICON MFG CO LTD
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] Recombination drastically reduces solar cell efficiency under high-intensity sunlight

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Back contact design of solar cell and manufacturing method thereof
  • Back contact design of solar cell and manufacturing method thereof
  • Back contact design of solar cell and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0035] This description of the exemplary embodiments is to be read in conjunction with the accompanying drawings, which are considered a part of the entire written description. In the drawings, the same reference numerals denote the same elements.

[0036] In descriptions, the relative terms "below", "above", "horizontal", "vertical", "above", "below", "upward", "downward", "top" should be used and "bottom" and its derivatives (eg, "horizontally," "downwardly," "upwardly," etc.) are understood to refer to the orientation described or illustrated by the figure in question. These relative terms are for convenience of description and do not require that the device be constructed or operated in a particular orientation.

[0037] The present invention describes photovoltaic cells in which spacers or voids are placed directly on top of the back contact layer. The spacers or voids reduce the contact area between the absorber layer and the back contact layer, thereby providing a sol...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a back contact design of a solar cell and a manufacturing method thereof. A method is disclosed that includes directly depositing spacers at a plurality of locations on a back contact layer over a solar cell substrate. An absorber layer is formed over the back contact layer and the spacer. The absorbent layer is partly in contact with the spacer and partly in direct contact with the back contact layer. The solar substrate is heated to form a void at the location of the spacer between the absorber layer and the back contact layer.

Description

technical field [0001] The present invention relates generally to solar cells and, more particularly, to thin film photovoltaic cells and methods for their manufacture. Background technique [0002] A photovoltaic cell or solar cell is a photovoltaic module that uses sunlight to directly generate electricity. The manufacturing of solar cells has expanded significantly in recent years and continues to expand due to the growing demand for clean energy. A solar cell includes a substrate, a back contact layer on the substrate, an absorber layer on the back contact layer, a buffer layer on the absorber layer, and a front contact layer over the buffer layer. These layers may be applied to the substrate during the deposition process, for example using sputtering and / or co-evaporation. [0003] Semiconductor materials may be used in at least a portion of the absorber layer of some solar cells. For example, chalcopyrite-based semiconductor materials such as copper indium gallium s...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0224H01L31/0216H01L31/032H01L31/0749
CPCH01L31/02167H01L31/022425H01L31/0322H01L31/0749H01L31/1864H01L31/1868Y02E10/541Y02P70/50H01L31/022441H01L31/0392
Inventor 程子桓蔡家弘
Owner TAIWAN SEMICON MFG CO LTD