Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

mems device and method of forming the same

A device and dielectric layer technology, which is applied in the field of MEMS devices and their formation, can solve the problems of low integration, large size, and inability to meet portability of micro-electromechanical devices, so as to improve the electrical isolation effect, the formation process is simple, and the integration is improved. degree of effect

Active Publication Date: 2016-08-31
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Usually, the semiconductor substrate containing the control circuit and the semiconductor substrate on which the MEMS devices are formed are arranged side by side in the lead frame. Therefore, the existing MEMS devices have a large volume, so the integration degree of the MEMS devices is not high. , unable to meet the requirements of portability in the application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • mems device and method of forming the same
  • mems device and method of forming the same
  • mems device and method of forming the same

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0035] Figure 1 to Figure 7 It is a schematic cross-sectional structure diagram of the formation process of the MEMS device according to the first embodiment of the present invention.

[0036] refer to figure 1, providing a semiconductor substrate 200 having a first region 21 and a second region 22 ; forming a CMOS device 201 on the front side of the semiconductor substrate 200 in the first region 21 .

[0037] The material of the semiconductor substrate 200 may be silicon (Si), germanium (Ge), or silicon germanium (GeSi), silicon carbide (SiC); it may also be silicon on insulator (SOI), germanium on insulator (GOI); Or it can also be other materials, such as III-V group compounds such as gallium arsenide. In this embodiment, the semiconductor substrate 200 is a silicon substrate.

[0038] The semiconductor substrate 200 includes a first region 21 and a second region 22 , the first region 21 is used to form a CMOS device, and the second region 22 is used to form a via inte...

no. 2 example

[0081] Figure 8 ~ Figure 13 It is a schematic cross-sectional structure diagram of the formation process of the MEMS device according to the second embodiment of the present invention.

[0082] refer to Figure 8 , providing a semiconductor substrate 300 having a first region 31 and a second region 32; forming a CMOS device 301 on the front side of the semiconductor substrate 300 in the first region 31; forming a layer covering the semiconductor substrate 300 and the dielectric layer of the CMOS device 301, the dielectric layer includes a first dielectric layer 302 and a second dielectric layer 315, a first interconnection structure 311 is formed in the dielectric layer of the first region 31, and the first plug 305 serves as the first A part of the interconnection structure 311, the first interconnection structure 311 is connected to the CMOS device 301, the second interconnection structure 314 is formed in the dielectric layer of the second region 32; the first interconnec...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an MEMS device and a forming method thereof. The MEMS device comprises: a semiconductor substrate provided with a first region and a second region, wherein a CMOS device is formed on the semiconductor substrate of the first region; a dielectric layer covering the CMOS device, wherein a first interconnection structure connected with the CMOS device is formed in the dielectric layer of the first region, and a second interconnection structure is formed in the dielectric layer of the second region; a first welding disc positioned on the dielectric layer of the first region and connected with the first interconnection structure, and a second welding disc positioned on the dielectric layer of the second region and connected with the second interconnection structure; the MEMS device positioned on the dielectric layer, wherein one end of the MEMS device is connected with the first welding disc, and other end of the MEMS device is connected with the second welding disc; a through hole interconnection structure penetrating through the semiconductor substrate and partial dielectric layer of the second region and connected with the second interconnection structure; and a convex block positioned on the back surface of the semiconductor substrate and connected with the through hole interconnection structure. The MEMS device of the present invention has the small occupation volume.

Description

technical field [0001] The invention relates to the field of MEMS production, in particular to a MEMS device and a forming method thereof. Background technique [0002] MEMS (Micro Electro Mechanical System, micro-electromechanical device) technology is a high-tech that has developed rapidly this year. It is a technology for designing, processing, manufacturing, measuring and controlling micro / nanotechnology materials. MEMS devices are mainly micro-systems that integrate mechanical components, optical systems, drive components, and electronic control systems into an integral unit. MEMS technology is generally applied in the manufacture of micro-electro-mechanical devices, which include: position sensors, rotation devices, or inertial sensors, such as acceleration sensors, gyroscopes, and sound sensors. [0003] The existing technology uses MEMS technology to make micro-electromechanical devices (MEMS devices) on a semiconductor substrate, and then uses CMOS technology to ma...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): B81C1/00B81B7/00B81B7/02
Inventor 冯霞黄河刘煊杰张海芳
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com