Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Flash error detection method and device for reducing influence on performance of interface of storage

A memory interface and error detection technology, which is applied in the direction of redundant code error detection and response error generation, can solve problems such as ECC unit data failure, and achieve the effect of improving efficiency and having little impact on performance

Active Publication Date: 2015-05-13
广东华晟数据固态存储有限公司
View PDF7 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the number of Bit flips will increase with time, and as time accumulates, the total number of Bit flips in the ECC unit will exceed the capacity of the ECC engine, resulting in data failure of the entire ECC unit

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Flash error detection method and device for reducing influence on performance of interface of storage
  • Flash error detection method and device for reducing influence on performance of interface of storage
  • Flash error detection method and device for reducing influence on performance of interface of storage

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment 1

[0030] In this specific embodiment, based on the actual situation of the granule, according to the physical characteristics of each page of the flash memory, the pages in a block are divided into different groups according to the difference in the speed of ECC growth, and the pages in the group are more likely to have Bit flips In the case of , the higher the corresponding weight, the shorter the corresponding total cycle time. In the actual inspection operation, different inspection cycles are allocated according to different groups. The page with faster ECC growth has a shorter inspection cycle, and vice versa. According to the actual differences of each page, the ECC inspection cycle is set separately, and the interface performance pressure of Nand Flash flash memory will be smaller than that of the existing solution, which means that the performance impact on the external interface of the memory is small.

[0031] The product of the single timing time in a group and all th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a flash error detection method and device for reducing the influence on performance of an interface of a storage. According to the physical properties of positions where pages of a flash are located, the pages in one piece are assigned to different groups according to the ECC increasing speed difference, different inspection intervals are distributed according to the different groups in the actual inspection operation, the inspection intervals of the pages with the rapid ECC increase are shorter, and the inspection intervals of the pages with the slow ECC increase are longer. The performance pressure of the interface of the Nand Flash is reduced, namely the influence on the performance of the external interface of the storage is reduced.

Description

technical field [0001] The invention relates to a flash memory error detection method and device that reduce the impact on memory interface performance, in particular to a flash memory error detection method and device suitable for a memory including a Nand Flash flash memory medium. Background technique [0002] At present, Nand Flash, as a non-volatile storage medium, has been widely used from TF card, SD card to SSD hard disk and various electronic devices. The external packaging form of Nand Flash flash memory is a granular design. Each particle has one or more Dies. Each Die is composed of several blocks, and the block is composed of pages. The pages contain several data units. These data units are based on the design. Data from 1 bit to several bits can be stored. In terms of operation, it must be erased before writing. The smallest unit of erasing is a block, and the smallest unit of writing and reading is a page. [0003] Nand Flash flash memory itself has inherent...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G06F11/10
Inventor 黎智
Owner 广东华晟数据固态存储有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com