Wide-Swing Drivers Using Low-Voltage Devices
A low-voltage device and driver technology, applied in the direction of logic circuit coupling/interface, logic circuit connection/interface layout using field effect transistors, etc., can solve the problems of increasing chip area and power consumption, and achieve the effect of large swing
Active Publication Date: 2017-12-01
BRITE SEMICON SHANGHAI CORP
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Problems solved by technology
The large-scale use of 3.3v transistors as interface circuits not only increases the chip area and power consumption, but also goes against the trend of semiconductor technology update and progress
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[0017] In order to make the above objects, features and advantages of the present invention more comprehensible, the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0018] Reference herein to "one embodiment" or "an embodiment" refers to a particular feature, structure or characteristic that can be included in at least one implementation of the present invention. "In one embodiment" appearing in different places in this specification does not all refer to the same embodiment, nor is it a separate or selective embodiment that is mutually exclusive with other embodiments. Unless otherwise specified, the words connected, connected, and joined in this document mean that they are electrically connected directly or indirectly.
[0019] figure 2 It is a schematic circuit diagram of a large-swing driver 200 using a low-voltage device in an embodiment of the present invention. The large-swing driver...
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The present invention provides a large-swing driver using a low-voltage device, which includes: a level boosting circuit, which includes PMOS transistors pm1, pm2, pm3, and pm4, NMOS transistors nm1, nm2, nm3, and nm5, and connections between transistors pm3 and nm1 The node is node out1; the copy inverting circuit includes PMOS transistors pm5, pm6, NMOS transistors nm8 and nm7, and the connection node of transistors pm6 and nm8 is node out2; the first output drive unit includes PMOS transistors pm12, pm7, pm9 , resistor res1, NMOS transistors nm9, nm12, nm14 and resistor res3, the connection node of transistors pm12 and nm9 is connected to the node out1; the second output drive unit includes PMOS transistors pm11, pm8, pm10, resistors res0, NMOS transistors nm10, nm11, nm13 and resistor res2, wherein the connection node of transistors pm11 and nm10 is connected to said node out2, and the common connection node of resistors res0, res2, res1 and res3 forms an output terminal Dout. In this way, the present invention can utilize a low-voltage device to realize a large-swing output.
Description
【Technical field】 [0001] The invention relates to the technical field of interface design, in particular to a large-swing driver using a low-voltage device. 【Background technique】 [0002] With the development of semiconductor technology and the continuous reduction of transistor size, the required power supply voltage is getting lower and lower. The voltage of the I / O (input / output) interface has been reduced from 5v and 3.3v to the current 1.8v. As transistor channel dimensions get smaller and gate insulating layers get thinner, the maximum voltage a device can tolerate gets lower and lower. However, traditional interface electrical standards are specified by power supply voltages such as 3.3v and 5v. In order to be compatible with traditional interface electronic equipment, it has become a challenge to use low-voltage devices to achieve high power supply voltage interface circuits. [0003] Taking the USB (Universal Serial Bus, Universal Serial Bus) standard as an examp...
Claims
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IPC IPC(8): H03K19/0185
Inventor 周玉镇戴颉李耿民庄志青职春星
Owner BRITE SEMICON SHANGHAI CORP