Light-emitting device with compactly arranged quantum dot light-emitting layer and preparation method thereof

A quantum dot light-emitting and light-emitting device technology, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., can solve the problems of low device efficiency, leakage current, and insufficient density of quantum dots, so as to improve efficiency, The arrangement is uniform and dense, and the effect of improving the radiation recombination luminous efficiency

Active Publication Date: 2015-11-18
武汉国创科光电装备有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a light-emitting device with a densely arranged quantum dot light-emitting layer and a preparation method thereof, aiming at solving the phenomenon that the existing quantum dots are not densely arranged and there is leakage current, etc., the device The problem of inefficiency

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] 1) The ITO conductive glass substrate is cleaned with chloroform, acetone and isopropanol in sequence, and then the cleaned ITO conductive glass substrate is treated with ultraviolet ozone plasma.

[0050] 2), hole injection layer: MoO 3 (10nm) in high vacuum (1×10 -6 MPa) by thermal evaporation (MoO 3 powder).

[0051] 3) Densely arranged quantum dot light-emitting layer: hydrolyze 3-(methacryloyloxy)propyltrimethoxysilane on the surface of CdTe / CdS quantum dots to prepare SiO with methacryloyl groups at the end 2 Shell stabilized CuInS 2 / SiO 2 Core-shell quantum dots are configured in cyclohexane solvent (15mg / mL), and 0.5wt% photoinitiator 2-hydroxy-2-methyl-1-phenyl-1 acetone is added, and then inkjet Print on MoO 3 On, 2000rpm, 30s. Next, heat the 20mM methanol solution of 1,3-propanedithiol to 40°C, then immerse the quantum dot film in the methanol solution of 1,3-propanedithiol for 5min, remove it and place it under ultraviolet light irradiation The cros...

Embodiment 2

[0056] 1) The ITO conductive glass substrate is cleaned with chloroform, acetone and isopropanol in sequence, and then the cleaned ITO conductive glass substrate is treated with ultraviolet ozone plasma.

[0057] 2), hole injection layer / hole transport layer: the aqueous solution of PEDOT:PSS used for the hole injection layer is spin-coated on the ITO, and the spin coating is carried out at a speed of about 4000rpm for 60 seconds, and then baked at 140°C Bake for 10 minutes.

[0058] The Poly-TPD used for the spin coating of the hole transport layer was dissolved and diluted to 8mg / mL in chlorobenzene, and the spin coating was carried out at a speed of about 2000rpm for 45 seconds, and then baked at 110°C for 20 minutes.

[0059] 3) Quantum dot light-emitting layer: Inkjet printing of CdSe / ZnS quantum dots with 8-aminooctanoic acid in a cyclohexane solvent (10 mg / ml) on the Poly-TPD hole transport layer. Next, a 20 mM toluene solution of 1,6-hexyl diisocyanate was prepared, a...

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PUM

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Abstract

The invention discloses a light-emitting device with a compactly arranged quantum dot light-emitting layer and a preparation method thereof. Another compound solution playing a role in crosslinking is added to the quantum dot light-emitting layer, so quantum dot surface ligand exchange is achieved, and then the crosslinking is performed. Through crosslinking processing of the quantum dots, the prepared quantum dots are arranged uniformly and compactly and do not have defects of a pinhole, a crack and the like, and a leakage current does not exist, so the problem of an impure spectrum and the like which are caused by efficiency reduction of a quantum dot light-emitting diode or light emitting of other adjacent charge transmission layers are effectively solved. Radiation composite light-emitting efficiency can be improved, and then efficiency of the quantum dot light-emitting diode is improved.

Description

technical field [0001] The invention relates to the technical field of QLED light-emitting devices, in particular to a light-emitting device with densely arranged quantum dot light-emitting layers and a preparation method thereof. Background technique [0002] Quantum dots can also be called semiconductor nanocrystals, which are nanocrystalline particles with a radius smaller than or close to the radius of the Bohr excitons. The size of quantum dots is very small, and its particle size is generally between 1-20nm. Quantum dots have a quantum confinement effect, and the continuous energy band structure becomes a discrete energy level structure with molecular characteristics, which can emit fluorescence after being excited. Quantum dots have unique luminescence characteristics, making them have broad application prospects in the field of optoelectronics . QLED light-emitting devices are devices that use colloidal quantum dots as the light-emitting layer with a sandwich struc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/56
CPCH10K71/12H10K71/15
Inventor 李雪付东
Owner 武汉国创科光电装备有限公司
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