A quantum dot light-emitting diode and its preparation method

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of insufficient density of quantum dots, leakage current, low device efficiency, etc., and achieve uniform and dense arrangement, Improve efficiency and improve the effect of radiation recombination luminous efficiency

Active Publication Date: 2018-09-18
武汉国创科光电装备有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the purpose of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problems of insufficient density of the existing quantum dot arrangement, leakage current and other phenomena, and low device efficiency.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] 1) The ITO conductive glass substrate is cleaned with chloroform, acetone and isopropanol in sequence, and then the cleaned ITO conductive glass substrate is treated with ultraviolet ozone plasma.

[0050] 2), hole injection layer: MoO 3 (10nm) in high vacuum (1×10 -6 MPa) by thermal evaporation (MoO 3 powder).

[0051] 3) Densely arranged quantum dot light-emitting layer: hydrolyze 3-(methacryloyloxy)propyltrimethoxysilane on the surface of CdTe / CdS quantum dots to prepare SiO with methacryloyl groups at the end 2 Shell stabilized CuInS 2 / SiO 2 Core-shell quantum dots are configured in cyclohexane solvent (15mg / mL), and 0.5wt% photoinitiator 2-hydroxy-2-methyl-1-phenyl-1 acetone is added, and then inkjet Print on MoO 3 On, 2000rpm, 30s. Next, heat the 20mM methanol solution of 1,3-propanedithiol to 40°C, then immerse the quantum dot film in the methanol solution of 1,3-propanedithiol for 5min, remove it and place it under ultraviolet light irradiation The cro...

Embodiment 2

[0056] 1) The ITO conductive glass substrate is cleaned with chloroform, acetone and isopropanol in sequence, and then the cleaned ITO conductive glass substrate is treated with ultraviolet ozone plasma.

[0057] 2), hole injection layer / hole transport layer: the aqueous solution of PEDOT:PSS used for the hole injection layer is spin-coated on the ITO, and the spin coating is carried out at a speed of about 4000rpm for 60 seconds, and then baked at 140°C Bake for 10 minutes.

[0058] The Poly-TPD used for the spin coating of the hole transport layer was dissolved and diluted to 8mg / mL in chlorobenzene, and the spin coating was carried out at about 2000rpm for 45 seconds, and then baked at 110°C for 20 minutes.

[0059] 3) Quantum dot light-emitting layer: Inkjet printing of CdSe / ZnS quantum dots with 8-aminooctanoic acid in a cyclohexane solvent (10 mg / ml) on the Poly-TPD hole transport layer. Next, a 20 mM toluene solution of 1,6-hexyl diisocyanate was prepared, and then the...

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PUM

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Abstract

The invention discloses a quantum dot light-emitting diode and a preparation method thereof. In the present invention, another cross-linking compound solution is added to the quantum dot light-emitting layer to realize ligand exchange on the quantum dot surface, thereby performing cross-linking. Through the above-mentioned cross-linking treatment of quantum dots, the prepared quantum dots are arranged uniformly and densely, and there are no defects such as pinholes and cracks, and there will be no leakage current, thus effectively solving the problem of quantum dot light-emitting diode efficiency decline or other adjacent problems. The charge transport layer emits light, causing problems such as spectral impurity. Moreover, the radiative recombination luminous efficiency can be improved, and then the efficiency of the quantum dot light-emitting diode can be improved.

Description

technical field [0001] The invention relates to the technical field of QLED light-emitting devices, in particular to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dots can also be called semiconductor nanocrystals, which are nanocrystalline particles with a radius smaller than or close to the radius of the Bohr excitons. The size of quantum dots is very small, and its particle size is generally between 1-20nm. Quantum dots have a quantum confinement effect, and the continuous energy band structure becomes a discrete energy level structure with molecular characteristics, which can emit fluorescence after being excited. Quantum dots have unique luminescence characteristics, making them have broad application prospects in the field of optoelectronics . QLED light-emitting devices are devices that use colloidal quantum dots as the light-emitting layer with a sandwich structure, that is, introduce a light-emitting lay...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56
CPCH10K71/12H10K71/15
Inventor 李雪付东
Owner 武汉国创科光电装备有限公司
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