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A detection structure and detection method of an under-pad device
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A technology for detecting structures and pads, which is applied in the direction of semiconductor/solid-state device testing/measurement, semiconductor/solid-state device components, semiconductor devices, etc.
Active Publication Date: 2018-11-16
SEMICON MFG INT (SHANGHAI) CORP
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Abstract
Description
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Problems solved by technology
[0004] In the prior art, it is possible to detect a single transistor or a transistor array, but there is no detection structure and method for detecting devices and circuits under pads
Method used
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Embodiment 1
[0033] Attached below Figure 1a and 1b The detection structure is further explained.
[0034] Such as Figure 1a and 1b As shown, wherein, the ring oscillator 10 is arranged under the pad 20, wherein the pad 20 can be a bonding pad or a detection pad, and is not limited to a certain one, which can be selected from this Metal materials commonly used in the field.
[0036] Further, other active devices, circuits or devices are formed under the pad 20 in the present invention, which will not be listed here one by one. In the present invention, by testing the influence of joint stress and detection stress on the detection structure, To evaluate the performance of other under-pad devices and the impact on bonding and probing.
[0037] Optionally, the number of the ring oscillators 10 ...
Embodiment 2
[0047] Attached below Figure 1c The detection structure is further explained.
[0048] Such as Figure 1c As shown, wherein the ring oscillator is arranged under the pad 20, wherein the pad 20 can be a bonding pad or a detection pad, and is not limited to a certain one, which can be selected from the field Commonly used metal materials.
[0049] Further, a passivation layer (not shown in the figure) may also be formed under the pad 20 , and the ring oscillator is located in the passivation layer or below the passivation layer.
[0050] Further, there are other active devices, circuits or devices formed under the pad 20 in the present invention, which will not be listed one by one here. impact to evaluate the performance of other under-pad devices and the impact on bonding and probing.
[0051] In this embodiment, the ring oscillators are nested inside and outside, and the number of the ring oscillators is not limited to a certain value range, and can be set as required. ...
Embodiment 3
[0062] The structure of this embodiment is the same as that described in Implementation 2, the difference is that a number of virtual inverters 40 are arranged on the periphery of the outer ring oscillator 102 to surround the ring array, as Figure 1d As shown, wherein the virtual inverters are set independently of each other and are not connected to each other.
[0063] In this embodiment, by setting the virtual inverter, the change of the layout of the detection structure itself to transistor parameters can be reduced, so as to further improve the accuracy of the detection structure.
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Abstract
The invention relates to a detection structure for a device under a pad and a detection method. The detection structure comprises a detection unit located under a pad. The detection unit comprises a plurality of ring oscillators. The ring oscillators are arranged linearly to form a linear array or nested inside and outside to form a ring array. The invention aims to solve the problems in the prior, and provides the detection structure for the device under the pad, the detection structure comprises the pad and the detection unit located under the pad, the detection unit comprises the plurality of ring oscillators, the plurality of ring oscillators are arranged linearly to form the linear array or nested inside and outside to form the ring array, the detection structure are tested respectively before and after bonding or probing, by comparison of parameters before and after bonding or probing, the effects on the detection structure in the bonding or probing process can be obtained, and the device under the pad can thus be evaluated.
Description
technical field [0001] The invention relates to the field of semiconductors, and in particular, the invention relates to a detection structure and a detection method of an under-pad device. Background technique [0002] With the continuous development of semiconductor technology, the device size and chip size are continuously reduced. In order to further reduce the chip size, active circuits (active circuits) or devices need to be formed under bonding pads or bonding / probing pads. [0003] The bonding and probing steps are usually included in the device fabrication process, in which bonding stress and probing stress are generated, which can cause fluctuations in the performance of the circuit or device under the pad, such as propagation delay (propagation delay) and leakage current (drain current) fluctuations, etc. Therefore, the effects caused by bonding stress and probing stress need to be evaluated in the development and mass production stages. [0004] In the prior art...
Claims
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Application Information
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