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Photocurable read-only memory and its writing method and data curing method

A read-only memory and light-curing technology, which is applied in the field of memory, can solve problems such as difficult high-density integration, achieve long data retention time, realize multi-bit storage, and achieve high device performance.

Active Publication Date: 2018-03-30
CHANGZHOU INST OF PRINTED ELECTRONICS IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to its passive nature, this kind of organic read-only memory based on two-terminal structure has a big disadvantage that it is difficult to achieve high-density integration.

Method used

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  • Photocurable read-only memory and its writing method and data curing method
  • Photocurable read-only memory and its writing method and data curing method
  • Photocurable read-only memory and its writing method and data curing method

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Embodiment Construction

[0023] As mentioned in the background technology, the structure of a large number of organic read-only memories is a two-terminal structure, a wire structure or a metal / insulation layer / metal structure. Realize the function of read-only memory.

[0024] In this regard, the inventors of the present invention have conducted a large amount of research on the above-mentioned defects, and proposed a new organic read-only memory capable of high-density integration, including a substrate; a gate located on the surface of the substrate; A photo-crosslinkable insulating layer doped with ionic compounds covering the grid; a buffer layer located on the surface of the insulating layer; a semiconductor layer located on the surface of the buffer layer; and a source electrode and a drain electrode located on the surface of the semiconductor layer.

[0025] Embodiments of the present invention provide a photo-crosslinkable insulating layer doped with an ionic compound located on the surface o...

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PUM

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Abstract

An optically written read-only memory and its writing method and data curing method, wherein the optically written read-only memory comprises: a substrate; a gate located on the surface of the substrate; a gate located on the surface of the substrate and covering the gate A photocrosslinkable insulating layer doped with ionic compounds; a buffer layer located on the surface of the insulating layer; a semiconductor layer located on the surface of the buffer layer; and a source electrode and a drain electrode located on the surface of the semiconductor layer. The invention can provide an optical writing read-only memory with high integration and good data retention, its writing method and data curing method.

Description

technical field [0001] The invention relates to the field of memory, in particular to a photocurable read-only memory, a writing method thereof, and a data curing method. Background technique [0002] Organic non-read-only memory has gained widespread attention due to its advantages of low cost, flexibility, and solution processability. Organic read-only memory is a very important kind of organic non-volatile memory. Due to its characteristic that it cannot be erased once it is written, organic read-only memory can be used in many low-cost fields such as anti-counterfeiting. [0003] So far, the structure of a large number of organic read-only memories is a two-terminal structure, a wire structure or a metal / insulation layer / metal structure. The working mechanism is to use the two-terminal structure to fuse under a certain external current to cause an irreversible change in resistivity to achieve read-only. memory function. However, due to its passive characteristics, this...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/05G11C17/08
CPCG11C17/08H10K10/468H10K10/471
Inventor 张霞昌曹卓郭小军冯林润王若琳
Owner CHANGZHOU INST OF PRINTED ELECTRONICS IND CO LTD
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