TFT and manufacturing method thereof, array substrate and display device
A manufacturing method and substrate substrate technology, applied in semiconductor/solid-state device manufacturing, electrical components, transistors, etc., can solve problems such as mobility reduction, TFT performance impact, and characteristic degradation
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Embodiment 1
[0044] The active layer 12 in this embodiment includes a first active layer 121 and a second active layer 122 . Such as Figure 2a As shown, the first active layer 121 is closer to the source 13 and the drain 14 than the second active layer 122 .
[0045] Specifically, such as Figure 2a As shown, the first active layer 121 is closer to the source 12 and the drain 14 than the second active layer 122 . In this way, since the first active layer 121 is located on the surface of the second active layer 122 , the mobility of the first active layer 122 can be protected easily from the external environment. During the process of manufacturing the source electrode 12 and the drain electrode 14 , moisture or oxygen in the external environment is prevented from directly contacting the second active layer 122 , thereby reducing the mobility of the second active layer 122 .
[0046] Wherein, for the material constituting the second active layer 122, such as cadmium oxide (CdO), aluminum ...
Embodiment 2
[0049] The active layer 12 in this embodiment includes a first active layer 121 and a second active layer 122 . The difference from Example 1 is that, if Figure 2b As shown, the second active layer 122 is closer to the source 13 and the drain 14 than the first active layer 121 .
[0050] On this basis, in order to avoid external moisture or oxygen from affecting the performance of the second active layer 122 during the process of manufacturing the source electrode 13 and the drain electrode 14 . An etching stopper layer 15 may be provided on the surface of the second active layer 122 to protect the second active layer 122 so that it can maintain the original mobility. In addition, the first active layer 121 located below the second active layer 122 can further increase the mobility of the entire active layer 12 due to its higher mobility.
[0051] In addition, the material constituting the first active layer 121 is the same as the first embodiment, and may also be indium ti...
Embodiment 3
[0056] Active layer 12 in this embodiment, such as image 3 As shown, one first active layer 121 and two second active layers 122 may be included.
[0057] Wherein, the first active layer 121 is located between the two second active layers 122, and an etching stopper layer 15 is formed on the surface of the second active layer 122' close to the source electrode 13 and the drain electrode 14. In this way, the second active layer 122 in contact with the source electrode 13 and the drain electrode 14 can be protected through the above-mentioned etching stopper layer 15, so as to avoid the external environment in the process of making the source electrode 13 and the drain electrode 14. The performance of the second active layer 122 is reduced so that it can maintain the original mobility. In addition, the first active layer 121 located between the two second active layers 122 can further increase the mobility of the entire active layer 12 due to its higher mobility.
[0058] In ...
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