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Method of memory access

An access method and memory technology, applied in the field of memory access, can solve problems such as difficulty in use and inability to implement re-refresh actions, and achieve the effects of improving reliability and avoiding data errors

Active Publication Date: 2018-12-18
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This approach cannot be implemented in the burst refresh action
In addition, in order to cooperate with the additional re-refresh operation, it is usually necessary to change the usage specifications of the dynamic memory, which is likely to cause difficulties in use.

Method used

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  • Method of memory access
  • Method of memory access
  • Method of memory access

Examples

Experimental program
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Embodiment Construction

[0029] Please refer to figure 2 , figure 2 A flowchart illustrating a memory access method according to an embodiment of the present invention. Wherein, the present embodiment is a flow of a data access method for a DRAM, especially a flow of a method for accessing a DDR4 (double-data-rate 4) standard. In step S210 , during the operation of the memory, the operation of counting the number of times each word line address is accessed is performed. The above-mentioned calculation of the number of access times can be started after the re-fresh action of each word line address is performed, and when each word line address is activated to perform an access action, corresponding to each word line address The value of the number of times accessed may be incremented (eg by 1). In addition, when the next re-refresh operation corresponding to each word line address is performed, the value corresponding to the access times of each word line address can be reset to 0.

[0030] In ste...

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PUM

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Abstract

The present invention provides a memory access method comprising the following steps: calculating accessed times of each word line address; setting the corresponding each word line address as a violation word line address based on comparing of the accessed times and a critical access time; and setting a standby word line address, and the using memory cells of the standby word line address to replace memory cells of the violation word line address.

Description

technical field [0001] The present invention relates to a memory access method, and in particular to a method for reducing the row hammer effect of the memory. Background technique [0002] Under certain application conditions of the dynamic memory, a certain word line needs to be turned on many times. In such a situation, memory cells on word lines adjacent to word lines that have been repeatedly turned on many times may cause variations in stored data due to cross talk or coupling effects. The above-mentioned state is called word line impact effect (Row hammer effect). [0003] For details, please refer to figure 1 A schematic diagram of the word line shock effect generated by the dynamic memory is shown. When the word line WLA is repeatedly turned on between two adjacent refresh operations, the word lines WLB and WLC adjacent to the word line WLA will generate memory cell damage due to the repeated turn-on actions of the word line WLA. Variations in the data. The wor...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16
CPCG11C11/1655G11C11/1657G11C11/1659
Inventor 张智翔
Owner WINBOND ELECTRONICS CORP