Trench-type super junction manufacturing method
A manufacturing method and super-junction technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems affecting production yield, device failure, and device reverse leakage current increase
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[0037] First introduce the problems of the existing trench superjunction manufacturing method, the present invention has made specific improvements to these technical problems, such as figure 1 Shown is a schematic structural diagram of a super junction formed by an existing trench-type super junction manufacturing method; the existing method includes the following steps:
[0038] Step 1: Provide a semiconductor substrate such as a silicon substrate 101 , and an N-type epitaxial layer such as an N-type silicon epitaxial layer 102 is formed on the surface of the semiconductor substrate 101 .
[0039] Step 2: Forming a plurality of trenches in the N-type epitaxial layer 102 by photolithography. The hard mask layer 103 is used when etching the trench.
[0040] Step 3: filling the trench with a P-type epitaxial layer such as a P-type silicon epitaxial layer 104 during epitaxial growth, and the P-type epitaxial layer 104 will simultaneously extend to the surface of the N-type epit...
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