38results about How to "Eliminate lattice defects" patented technology

The invention relates to the crystallization of amorphous silicon films as well as manufacture method and device of poly-silicon films. In the method, electron beams of high energy density are used to act on amorphous silicon films to control the electron beams to accelerate anode voltage and beam flow so that amorphous silicon melt layers and glass base plates keep in extremely high temperature gradient. After the electron beams are stopped, the amorphous silicon melt layers are gradually cooled and crystallized. The device mainly comprises an electron-optical system, a computer control system, a workpiece chamber and a workpiece control table placed in the workpice chamber. A cathode is placed in a negative high voltage end, amorphous silicon is grounded, the electron beams scan line byline, the repetition rate on scanning the last line and the next line by the electron beams can reach above 99%, the electron beams are cut off after one round is scanned, the workpiece control tableis moved for the next round of scanning, and the process is thus repeated. The workpiece chamber can be a vacuum chamber or is in an atmosphere condition or a certain atmosphere. If in the atmosphereor inert gas environment, an electron beam leading window is arranged between the workpiece chamber and the electron-optical system.