Manufacturing method of semiconductor
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as lower pass rate of DARM products and surface damage of Si substrates
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment Construction
[0016] According to the manufacturing method of semiconductor device of the present invention, comprise the following steps:
[0017] Step 1: grow pad oxide layer (Pad-ox) by diffusion furnace on Si substrate, its thickness is
[0018] Step 2: Then grow silicon nitride (Si 3 N 4 ) (its thickness is ).
[0019] Step 3: Add photoresist (PR) on the insulating film to form the isolation layer, and use a mask with an isolation layer pattern for exposure and development
[0020] Step 4: active area etching (RIE plasma etching);
[0021] Step 5: Additional soft corrosion, soft corrosion is a kind of physical and chemical corrosion, under microwave plasma (frequency 2.45GHz), use CF 4 / O 2 The mixed gas used as an etchant to remove lattice defects caused by plasma damage, CF 4 / O 2 The flow rate ratio of the mixed gas is CF 4 :O 2 =1:(3~5), preferred CF 4 / O 2 The flow rate ratio of the mixed gas is CF 4 :O 2 =1:4.
[0022] Step 6: stripping the photoresist (PR);
...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com