151results about How to "Increase the radius of curvature" patented technology

The invention relates to a method which is used to shape and guide a wave winding (10) with a connecting section (12) which is connected through a winding end portion (14) into a rotor plate assembly or a stator-plate assembly (20) of a motor, wherein the method comprises: cutting a wave winding belt (52) which is composed of winding wires (56) whose lateral sections take rectangle shapes or circular shapes and are shaped continuously into wave windings (10) which are respectively provided with a certain number of waveforms, alternately encircling the winding wires around the lateral surface of a shaped protuberance (50) on the periphery of a shaped element which can be rotatably driven though a wire guiding device in a shaping process to lay, then, guiding the wave windings (10) which is cut by the wave winding belt (52) into the rotor plate assembly or the stator-plate assembly or a groove (89) which is radially opened outwards of a transferring tool (88) which is similar to a rotor, and transferring from the groove (89) of the transferring tool (88) which is similar to the rotor to the groove which is radially opened inwards of the rotor plate assembly or the stator-plate assembly. The invention is characterized in that the winding wires encircle on the periphery of two discs (46, 48) which are rotatably driven in parallel axially according to one line respectively or on the lateral surface of the shaped protuberance (50) which are cross-arranged on the periphery of the roller which is driven rotatably according to two lines, wherein the distance between the shaped protuberance (50) on a line and the shaped protuberance on next line can be enlarged like this in an angular range that the wave winding belt (52) is driven on the periphery of the discs (46, 48) and the roller, which enables the lateral surface of the shaped protuberance (50) shapes the winding end portion (14) of the wave winding (10).

A junction terminal structure of a lateral high-voltage power semiconductor device belongs to the technical field of semiconductor power devices. By shortening the length of the N-type drift region at the curvature terminal portion of the lateral high-voltage power semiconductor device, the N-type drift region is separated from the P-well region by a certain distance, and the spaced part is replaced by a P-type substrate, which is equivalent to introducing a P-type substrate. The additional charge reduces the peak value of the electric field at the pn junction formed by the original P-well region and the N-type drift region, and at the same time introduces a new peak value of the electric field at the pn junction formed by the P-type substrate and the N-type drift region, and increases The curvature radius of the curvature terminal is improved, the excessive concentration of the power line is avoided, and the breakdown voltage of the device is improved. The surface of the N-type drift region can also be combined with a surface RESURF structure or a super junction structure. The invention can reduce the width of the curvature terminal of the device, save the layout area of ​​the device, and is compatible with the CMOS process. The invention can be used to manufacture high-voltage, high-speed, and low-conduction-loss lateral high-voltage power devices with excellent performance.

The object of an illumination device of the invention is to further improve the light use efficiency of a lighting device of a color re-capture type. In a lighting device 10 of a color re-capture type, a color wheel 40 having filter films 41R-41B is located at an opening 23 of an emitting port 20b of an integrator 20, a center reflecting mirror 30 is located at an opening 22 of an incident side connected with the integrator 20 and on an optical axes 80 of a lamp 13 to reflect a light to a side of the opening 22 of the integrator 20. In the light which is not passed through the color wheel 40 to return to the integrator 20, the light 73 leaked from the opening 22 of the incident side is reflected by the center reflecting mirror 30 so as to return to the integrator 20, thereby further improving the light use efficiency.

Flexible semiconductor devices based on flexible freestanding epitaxial elements are disclosed. The flexible freestanding epitaxial elements provide a virgin as grown epitaxy ready surface for additional growth layers. These flexible semiconductor devices have reduced stress due to the ability to flex with a radius of curvature less than 100 meters. Low radius of curvature flexing enables higher quality epitaxial growth and enables 3D device structures. Uniformity of layer formation is maintained by direct absorption of actinic radiation by the flexible freestanding epitaxial element within a reactor. In addition, standard post processing steps like lithography are enabled by the ability of the devices and elements to be flattened using a secondary support element or vacuum. Finished flexible semiconductor devices can be flexed to a radius of curvature of less than 100 meters. Nitrides, Zinc Oxides, and their alloys are preferred materials for the flexible freestanding epitaxial elements.