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150results about How to "Increase the radius of curvature" patented technology

Junction termination structure of transverse high-pressure power semiconductor device

The invention relates to a junction termination structure of a transverse high-pressure power semiconductor device, belonging to the technical field of semiconductor power devices. An N-type drift region at a curvature termination of the transverse high-pressure power semiconductor device is shortened in length to ensure that the N-type drift region is spaced with a P-well region by a certain displace, wherein the spaced part is replaced by a P-type substrate, which is equivalent that additional electric charges of the P-type substrate are introduced so that the peak value of an electric field at a pn junction formed the original P-well region and the N-type drift region is reduced, meanwhile, a new peak value of the electric field is introduced at a pn junction formed by the P-type substrate and the N-type drift region, the radius of curvature of the curvature terminal is increased, the excessive concentration of a power line is avoided, and the puncture voltage of the device is increased, wherein the surface of the N-type drift region also can be combined with a surface RESURF structure or an ultra-junction structure. The junction termination structure has the advantages of being capable of decreasing the width of the curvature terminal of the device, saving the layout area of the device and being compatible with a CMOS (Complementary Metal-Oxide-semiconductor Transistor) process, and can be used for manufacturing the transverse high-pressure power device with the advantages of excellent performance, high voltage, high speed and low conduction loss.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Bilateral dislocation differential confocal element parameter measuring method

The invention belongs to the technical field of optical imaging and detecting and relates to a bilateral dislocation differential confocal element parameter measuring method. The method includes the steps that dislocation differential subtracting processing is conducted on the two sides of a confocal axial characteristic data set measured by the starting points and the ending points of all various size parameters including the curvature radius, the lens thickness, the refractive rate, the focal distance and the interval, and therefore the positioning precision of the starting points and the ending points of the size parameters is improved, and the measuring precision of optical elements of the curvature radius, the lens thickness, the refractive rate, the focal distance, the interval and the like is improved. According to the bilateral dislocation differential confocal element parameter measuring method, due to the fact that two sections of data, close to the position of the full width at half maximum and very sensitive to axial displacement, of a confocal characteristic curve are used for conducting the dislocation differential subtracting processing, the position, calculated by the data sections, of the extreme point of the confocal characteristic curve is more sensitive and more accurate than the position, calculated through an existing confocal characteristic curve top fitting method, of the extreme point of the confocal characteristic curve, according to the result of the bilateral dislocation differential confocal element parameter measuring method, under the condition that the confocal element parameter system structure is not changed, the axial focusing capability, the signal-to-noise ratio and the like of the system can be obviously improved.
Owner:BEIJING INSTITUTE OF TECHNOLOGYGY

Method for smoothing inflection point of discrete processing path

The invention relates to a method for smoothing an inflection point of a discrete processing path, and belongs to the field of high-speed high-performance numerical control processing. The method is characterized in that an externally tangent quintic B-spline curve with 9 control points is adopted to carry out smoothing processing on the inflection point of the discrete processing path, and problems of low speed and easy fluctuation in conventional discrete path inflection point processing are solved. The method comprises the steps of firstly constructing concrete forms of a characteristic polygon of a B-spline curve formed by the 9 control points and a node vector of the characteristic polygon with the aid of a vertex overlapping method and a convex-hull property, and back calculating the control points under the constraint of approximating to an error allowance value; then carrying out one-time correction on the control point by adopting a proportion regulating algorithm based on a length constraint of a transition section; and finally, and acquiring a quintic B-spline curve for inflection point smoothing according to the acquired characteristic polygon and the node vector. The method provided by the invention can enable the smoothed path to reach G1 continuity, and the smoothed curve has a greater curvature radius at the inflection point under the same error approximating condition compared with an internally tangent method.
Owner:DALIAN UNIV OF TECH

Embedded recoverable expansion anchor cable and construction method thereof

The invention discloses an embedded recoverable expansion anchor cable and a construction method thereof. The embedded recoverable expansion anchor cable comprises a grouting pipe, expansion unfolding arms, steel strand wires, a steel strand wire free sliding cabin, a fixing and bearing device, and a flexible telescopic sleeve, wherein the steel strand wire free sliding cabin is sleeved onto the upper part of the grouting pipe; the fixing and bearing device is arranged at the lower end of the grouting pipe; the expansion unfolding arms are uniformly distributed on the periphery of the grouting pipe; the upper ends of the expansion unfolding arms are fixed to the bottom of the steel strand wire free sliding cabin; the lower ends of the expansion unfolding arms are fixed to the top of the fixing and bearing device; the steel strand wire free sliding cabin can move in the axial direction with respect to the grouting pipe; the middle of each of the steel strand wires moves around the bottom of the fixing and bearing device; the two ends of each of the steel strand wires are respectively fixed onto the steel strand wire free sliding cabin and the two end parts of each of the steel strand wires respectively extend from the steel strand wire free sliding cabin; and the flexible telescopic sleeve is sleeved on the expansion unfolding arms and the steel strand wires. According to the embedded recoverable expansion anchor cable, the steel strand wires can be recovered and have higher bearing capacity.
Owner:CHINA JINGYE ENG +1

Method and device for forming wave windings for rotor and stator cores of electric machines

The invention relates to a method which is used to shape and guide a wave winding (10) with a connecting section (12) which is connected through a winding end portion (14) into a rotor plate assembly or a stator-plate assembly (20) of a motor, wherein the method comprises: cutting a wave winding belt (52) which is composed of winding wires (56) whose lateral sections take rectangle shapes or circular shapes and are shaped continuously into wave windings (10) which are respectively provided with a certain number of waveforms, alternately encircling the winding wires around the lateral surface of a shaped protuberance (50) on the periphery of a shaped element which can be rotatably driven though a wire guiding device in a shaping process to lay, then, guiding the wave windings (10) which is cut by the wave winding belt (52) into the rotor plate assembly or the stator-plate assembly or a groove (89) which is radially opened outwards of a transferring tool (88) which is similar to a rotor, and transferring from the groove (89) of the transferring tool (88) which is similar to the rotor to the groove which is radially opened inwards of the rotor plate assembly or the stator-plate assembly. The invention is characterized in that the winding wires encircle on the periphery of two discs (46, 48) which are rotatably driven in parallel axially according to one line respectively or on the lateral surface of the shaped protuberance (50) which are cross-arranged on the periphery of the roller which is driven rotatably according to two lines, wherein the distance between the shaped protuberance (50) on a line and the shaped protuberance on next line can be enlarged like this in an angular range that the wave winding belt (52) is driven on the periphery of the discs (46, 48) and the roller, which enables the lateral surface of the shaped protuberance (50) shapes the winding end portion (14) of the wave winding (10).
Owner:ELMOTEC STATOMAT VERTRIEBS

Large-current low-forward-voltage-drop silicon carbide Schottly diode chip and preparation method thereof

PendingCN108682695AForward voltage drop increasesOptimizing Forward Voltage DropSemiconductor/solid-state device manufacturingSemiconductor devicesP–n junctionPolyimide membrane
The invention provides a large-current low-forward-voltage-drop silicon carbide Schottly diode chip. The large-current low-forward-voltage-drop silicon carbide Schottly diode chip comprises a back laminated metal electrode, a front laminated metal electrode, an ohmic contact layer, a substrate, a first epitaxial layer, a second epitaxial layer, a P-type protecting ring, a N-type ion implanted layer, a Schottly metal Pt layer, an annular passivation layer and an annular polyimide film. The invention further provides a preparation method for the large-current low-forward-voltage-drop silicon carbide Schottly diode chip. The preparation method is capable of, through using a parallel design of a PN junction and a Schottly junction, double-layer epitaxial growth, and ion implantation and nitrogen ion doping, generating a large implantation effect in a large current by using a Schottly metal Pt, reducing the electrical resistivity of the epitaxial layer, realizing the manufacture for the large-current low-forward-voltage-drop silicon carbide Schottly diode, thereby overcoming the defects in the prior art that the forward voltage drop of a device is reduced as well as the reverse leakagecurrent of the device is increased while a low barrier metal is selected and a chip area is increased, a rate of finished products is reduced, and the manufacturing cost is increased.
Owner:JINAN JINGHENG ELECTRONICS

Pneumatic tire for vehicles

The invention relates to a tread profile of a pneumatic tire for vehicles having radially raised profile elements (1, 2, 3, 4) - in particular profile block elements and/or profile ribs - separated from each other by profile grooves (13, 14, 15), wherein at least one profile groove (14) is formed having a directional component of the main extent thereof in the circumferential direction U of the pneumatic tire for vehicles, wherein the profile groove (14) is formed having a groove root (18) aligned along the extent thereof and having a groove wall (16, 17) on each side of the groove root (18), formed having a groove wall (16, 17) extending in the radial direction R thereof from the groove root (18) to the shell surface radially outwardly delimiting the adjacent profile elements (2, 3), wherein a plurality of protrusions (20); is formed in the groove root distributed along the main extent of the groove (14), wherein said protrusions (20) each are made of at least two protrusion segment disposed adjacent to each other in the direction transverse to the main extent of the groove (14), wherein the protrusion (20) forms the shell surface of a cylindrical segment or a truncated cone segment in one of the two adjacent protrusion segments, and the shell surface of a cylindrical segment or a truncated cone segment in the other, wherein the axes of the cylinder segment or truncated cone segment are formed below the groove (14) having main direction components transverse to the main extent direction of the groove, wherein the two adjacent protrusion segments are formed having different radii of curvature over the extent of each in the protrusion segment.
Owner:CONTINENTAL REIFEN DEUTSCHLAND GMBH

Bell jar type damper used in high altitude areas

InactiveCN103633607AGood anti-halo effectAnti-halo performance guaranteeDevices for damping mechanical oscillationsControl theoryBell jar
The invention provides a bell jar type damper used in high altitude areas. By applying the bell jar type damper, the corona audible noise and the corona loss of a 330kV high altitude area electric transmission line can be effectively reduced, and the damper has the advantage of good damping performance. The damper comprises a damper head, a steel strand and a wire clamp. The damper head has a cylinder structure, one end of the damper head is provided with a lightening hole having a diameter of phi 3 in the inside, the other end of the damper head is provided with an installation having a length of L2 in the inside, and the damper head is provided with a drain hole having a outer diameter of phi 4 at the circular ring of the outer side of the lightening hole, wherein the drain hole runs through the circular ring in the axial direction. According to the bell jar type damper of the invention, through simulating calculation, the surface maximum field strength is reduced to 22kV/cm which is reduced by 19% compared with the surface maximum field strength of a conventional bell jar type damper; the corona onset voltage of the damper is 390kV in the 4000 meter altitude height simulation condition which is much higher than the 330kV rated operating voltage, so the occurrence of corona can be effectively restrained, and the damper has the advantage of good damping performance.
Owner:CHINA ELECTRIC POWER RES INST +1

Urban multilayer roundabout viaduct

The invention discloses an urban multilayer roundabout viaduct, comprising top-layer multi-direction small car lanes, middle-layer multi-direction small car lanes located at two sides of the top-layer multi-direction small car lanes and multi-direction road surface driving lanes located below the middle-layer multi-direction small car lanes, wherein the intersection center of the top-layer multi-direction small car lanes and the middle-layer multi-direction small car lanes is connected with a double-layer roundabout viaduct, the top-layer multi-direction small car lanes are parallel bidirectional small car lanes and are connected with a corresponding top-layer roundabout viaduct, the middle-layer multi-direction small car lanes are bidirectional small car lanes and are connected with parallely arranged transition bridges through approach bridges with certain angles and then connected with a roundabout viaduct module, and the multi-direction road surface driving lanes comprise straight and right-turn large car lanes, left-turn waiting lanes of branch roads and bicycle lanes. Since the urban multilayer roundabout viaduct is rapidly assembled into an integral body from steel structure modules, the urban multilayer roundabout viaduct has the advantages of small investment, a short construction cycle and no influence on normal traffic on the road during installation.
Owner:张文泉

Junction termination structure of transverse high-pressure power semiconductor device

A junction terminal structure of a lateral high-voltage power semiconductor device belongs to the technical field of semiconductor power devices. By shortening the length of the N-type drift region at the curvature terminal portion of the lateral high-voltage power semiconductor device, the N-type drift region is separated from the P-well region by a certain distance, and the spaced part is replaced by a P-type substrate, which is equivalent to introducing a P-type substrate. The additional charge reduces the peak value of the electric field at the pn junction formed by the original P-well region and the N-type drift region, and at the same time introduces a new peak value of the electric field at the pn junction formed by the P-type substrate and the N-type drift region, and increases The curvature radius of the curvature terminal is improved, the excessive concentration of the power line is avoided, and the breakdown voltage of the device is improved. The surface of the N-type drift region can also be combined with a surface RESURF structure or a super junction structure. The invention can reduce the width of the curvature terminal of the device, save the layout area of ​​the device, and is compatible with the CMOS process. The invention can be used to manufacture high-voltage, high-speed, and low-conduction-loss lateral high-voltage power devices with excellent performance.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Toilet drainage collection system

The invention provides a toilet drainage collection system. The toilet drainage collection system comprises a drainage pipe assembly, a transverse pipe drainage assembly communicating with the drainage pipe assembly and a water seal assembly communicating with the transverse pipe drainage assembly, wherein the drainage pipe assembly comprises a first water inlet pipe, a second water inlet pipe, afirst vertical pipe and a second vertical pipe, the first water inlet pipe and the second water inlet pipe are connected, the interior of the first water inlet pipe communicates with the interior of the second water inlet pipe, the inner edge of the second water inlet pipe is tangent to the inner edge of the first water inlet pipe, the first water inlet pipe is connected with the first vertical pipe, the interior of the first water inlet pipe communicates with the interior of the first vertical pipe, and a pipe wall cavity with an expanded volume is arranged at the communication part between the second water inlet pipe and the first water inlet pipe. According to the toilet drainage collection system, due to the fact that the pipe wall cavity with the expanded volume is arranged in the drainage pipe assembly, the curvature radius of wall-attached rotational flow of sewage of the drainage pipe assembly is increased, and it is guaranteed that the wall-attached rotational flow of the sewage can be achieved.
Owner:KANGTAI PLASTIC SCI & TECH GRP

Lifting auxiliary device and lifting operation method of part to be operated

The invention provides a lifting auxiliary device and a lifting operation method of part to be operated. The lifting auxiliary device is matched with a steel wire rope to which the part to be operated is hung, so that the part to be operated ascends or descends on a body to operated. The lifting auxiliary device comprises a holding mechanism, a supporting frame and a pulley assembly. The holding mechanism is installed on the body to be operated and used for supporting the supporting frame and preventing toppling. The supporting frame is supported on the holding mechanism and used for supporting the pulley assembly. The pulley assembly is installed on the top of the supporting frame and used for supporting the steel wire rope and changing the direction when the steel wire rope winds around the pulley assembly. In the using process, the lifting auxiliary device is installed on the body to be operated, the steel wire rope is connected with the part to be operated, the steel wire rope winds around the pulley assembly and is driven to ascend or descend through the drive mechanism, and the part to be operated is lifted. The device is simple in structure and can adapt to an area with a narrow space, and thus large crane mechanisms like a lifting machine can be omitted. Moreover, the lifting auxiliary device is directly installed on the body to be operated, and a supporting mechanism is omitted.
Owner:重庆西鹏防雷电子有限公司
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