Junction termination structure of transverse high-pressure power semiconductor device

Abstract

A junction terminal structure of a lateral high-voltage power semiconductor device belongs to the technical field of semiconductor power devices. By shortening the length of the N-type drift region at the curvature terminal portion of the lateral high-voltage power semiconductor device, the N-type drift region is separated from the P-well region by a certain distance, and the spaced part is replaced by a P-type substrate, which is equivalent to introducing a P-type substrate. The additional charge reduces the peak value of the electric field at the pn junction formed by the original P-well region and the N-type drift region, and at the same time introduces a new peak value of the electric field at the pn junction formed by the P-type substrate and the N-type drift region, and increases The curvature radius of the curvature terminal is improved, the excessive concentration of the power line is avoided, and the breakdown voltage of the device is improved. The surface of the N-type drift region can also be combined with a surface RESURF structure or a super junction structure. The invention can reduce the width of the curvature terminal of the device, save the layout area of ​​the device, and is compatible with the CMOS process. The invention can be used to manufacture high-voltage, high-speed, and low-conduction-loss lateral high-voltage power devices with excellent performance.

Description

technical field [0001] The invention belongs to the technical field of semiconductor power devices, and relates to a junction terminal structure of a lateral high-voltage power semiconductor device. Background technique [0002] The development of high-voltage power integrated circuits is inseparable from the integration of lateral high-voltage power devices. High-voltage power devices require high breakdown voltage, low on-resistance, and low switching loss. To achieve a high breakdown voltage of a lateral high-voltage power device requires a low doping concentration in the drift region used to bear the withstand voltage, but in order to meet the low on-resistance of the device, it also requires a high doping concentration in the drift region as a current channel . The contradictory relationship between the specific on-resistance of MOS devices and the withstand voltage of the devices limits the application of such devices in the field of high voltage and high current. L...

AI Technical Summary

Problems solved by technology

[0003] The present invention aims at the problems of small curvature radius at the curvature terminal of the lateral high-voltage power semiconductor device with small curvature radius junction terminal, easy concentration of electric field lines, large local electric field at the curvature end, and easy occurrence of early avalanche breakdown, and proposes a new type of lateral The junction terminal structure of high-voltage power semiconductor devices, which can even improve the withstand voltage capability of the curvature of the lateral high-voltage power semiconductor devices, while not occupying a large chip area

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